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Infineon N-Channel IGBT 80 A 600 V 3-Pin TO-247 Through Hole IKW50N60DTPXKSA1
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Model | IKW50N60DTPXKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Energy Rating | 2.38mJ |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 80A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 319.2W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Infineon IRGP6650DPBF IGBT, 80 A 600 V, 3-Pin TO-247AC, Through HoleBrand | Infineon |
Key Features
- Features a 3-pin TO-247 package with through hole mounting.
- Maximum power dissipation of 319.2 W supports robust operation.
- TrenchStop™ technology provides low collector-emitter saturation voltage and low turn-off losses.
- Maximum operating temperature up to 175°C allows for high thermal stability.
- Designed for high-speed switching up to 30 kHz, suitable for industrial power control.
- Maximum gate-emitter voltage rating is 20 V ensuring reliable gate control.
- Minimum operating temperature extends to -40°C for versatile environments.
- Energy rating of 2.38 mJ ensures endurance against switching stress.
Product Description
Infineon IKW50N60DTPXKSA1 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for efficient power switching applications. It supports a maximum continuous collector current of 80 A and a maximum collector-emitter voltage of 600 V. Packaged in a 3-pin TO-247 form factor with through hole mount, it is suitable for high power industrial, laboratory, and commercial applications.
This device benefits from Infineon's TrenchStop™ technology, enabling very low saturation voltage (VceSAT) of 1.8 V and minimal turn-off losses, improving energy efficiency. The IGBT is capable of switching frequencies up to 30 kHz, supported by a maximum power dissipation of 319.2 W, making it ideal for applications demanding high efficiency and fast switching.
The transistor operates reliably in wide temperature ranges, from -40°C minimum to 175°C maximum junction temperature, providing versatility for harsh industrial environments. The maximum gate-emitter voltage of 20 V allows for stable gate drive control, ensuring device longevity and performance consistency.
It is engineered without automotive certification but includes an energy rating of 2.38 mJ to guarantee switching robustness. The device is manufactured in China and conforms to industry standards without specific certifications listed.
3-pin TO-247 package with through hole mounting ensures easy integration into power circuitry. TrenchStop technology reduces losses and improves switching efficiency. Supports high continuous current and voltage ratings for robust power applications.
Wide operating temperature range for rugged industrial and laboratory usage. High switching speed capability suited for efficient power control systems.
This IGBT is suitable for sectors including industrial motor drives, HVAC systems, renewable energy inverters, power supplies, and manufacturing equipment. It offers excellent performance in demanding power electronics roles where efficiency and reliability are critical.
Explore more advanced power semiconductors and IGBTs from Infineon at EnvMart for your technical and industrial needs.
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Frequently Asked Questions
The maximum continuous collector current for this model is 80 A.
It has a maximum collector-emitter voltage rating of 600 V.
The maximum power dissipation for this device is 319.2 W.
This IGBT operates in a temperature range from -40°C to 175°C.
The maximum gate-emitter voltage rating is 20 V, ensuring reliable gate control.
It is packaged in a 3-pin TO-247 form factor with through hole mounting.
It utilizes Infineon's TrenchStop™ technology, which provides low collector-emitter saturation voltage and minimal turn-off losses.
The maximum collector-emitter saturation voltage is 1.8 V.
The energy rating is 2.38 mJ, ensuring robustness against switching stress.
It is suitable for applications such as industrial motor drives, HVAC systems, renewable energy inverters, and power supplies.
This IGBT is capable of switching frequencies up to 30 kHz.
This model is manufactured in China.
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