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DiodesZetex N-Channel MOSFET 3-Pin SOT-23 3.9 A 30 V Enhancement ZXMN3A14FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3.05mm |
| Model | ZXMN3A14FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | ZXMN3A14F |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-2579Brand: DiodesZetexManufacturers Part No.: ZXMN3A14FTA |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 95mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 8.6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 850mV |
Key Features
- Features a compact SOT-23 package for surface mounting applications.
- Offers low on-resistance of 95 milliohms to reduce conduction losses.
- Maximum power dissipation is 1.5 W suitable for moderate power designs.
- Operates efficiently over a wide temperature range from -55°C to 150°C.
- Includes automotive AEC-Q101 qualification ensuring reliability in automotive use.
- Typical gate charge is 8.6 nC allowing for fast switching speeds.
- Maximum gate-source voltage tolerance ranges from -20 V to +20 V.
- Forward voltage of 850 mV optimizes power conversion efficiency.
Product Description
DiodesZetex ZXMN3A14FTA N-Channel MOSFET is a high-performance discrete semiconductor device packaged in a 3-pin SOT-23 surface mount package. It is designed for switching and amplification applications requiring efficient power handling in industrial, automotive, and electronics manufacturing contexts.
This MOSFET features a maximum continuous drain current of 3.9 A and can withstand a maximum drain-source voltage of 30 V, making it suitable for low to medium power circuits. Its low drain-source resistance of 95 milliohms ensures minimal conduction losses, enhancing circuit efficiency.
The device is rated for power dissipation up to 1.5 W and operates reliably across a broad temperature range from -55°C to 150°C. Its typical gate charge of 8.6 nC allows for responsive switching, critical in power management designs.
Construction complies with the stringent automotive AEC-Q101 standard, supporting use in automotive electronics with reliability-focused designs. The gate-source voltage capability from -20 V to +20 V further extends the device's tolerance in various control circuits.
Physical dimensions of 3.05 mm length, 1.4 mm width, and 1.1 mm height result in a small footprint, facilitating high-density PCB layouts. Forward voltage of 850 mV optimizes power efficiency in switching applications.
Compact 3-pin SOT-23 surface mount package. 3.9 A drain current with 30 V drain-source voltage rating. Low drain-source resistance of 95 milliohms. 1.5 W maximum power dissipation for reliable operation. Wide operating temperature from -55°C to 150°C.
Automotive AEC-Q101 standard qualified for automotive use. Fast switching supported by 8.6 nC gate charge. Gate-source voltage tolerance up to ±20 V. Small package dimensions for compact PCB design. Suitable for industrial, automotive, and electronic power management applications.
This MOSFET is ideal for applications demanding reliable power switching and amplification in electronics manufacturing, automotive controls, and industrial equipment. It supports efficient power conversion and thermal management in robust, compact circuits.
Discover a wide range of discrete semiconductors including MOSFETs at EnvMart for all your industrial and electronics project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.9 A.
It has a maximum drain-source voltage rating of 30 V.
The low drain-source resistance is 95 milliohms, which helps reduce conduction losses.
The maximum power dissipation is 1.5 W, suitable for moderate power designs.
It operates efficiently over a wide temperature range from -55°C to 150°C.
The typical gate charge is 8.6 nC, allowing for fast switching speeds.
The gate-source voltage tolerance ranges from -20 V to +20 V.
The dimensions are 3.05 mm in length, 1.4 mm in width, and 1.1 mm in height.
It complies with the automotive AEC-Q101 standard, ensuring reliability in automotive applications.
This model comes in a compact SOT-23 surface mount package.
It is suitable for switching and amplification applications in industrial, automotive, and electronics manufacturing contexts.
This MOSFET has a 3-pin configuration.
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