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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | ZXMN7A11GTA |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-2501Brand: DiodesZetexManufacturers Part No.: ZXMN7A11GTA |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.8A |
| Maximum Drain Source Voltage Vds | 70V |
| Maximum Drain Source Resistance Rds | 190mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.9W |
| Typical Gate Charge Qg @ Vgs | 7.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 850mV |
DiodesZetex ZXMN7A11GTA is an N-Channel MOSFET designed for power management and switching applications in electronic circuits. This device supports a maximum continuous drain current of 3.8 A and a maximum drain-source voltage of 70 V, making it suitable for moderate power loads within various electronic systems.
The MOSFET features a surface-mount 4-pin SOT-223 package which enables efficient heat dissipation and compact assembly on printed circuit boards. Its enhancement mode channel operates with a gate-source voltage range of -20 V to +20 V and typical gate charge of 7.4 nC, facilitating fast switching and low gate drive power consumption.
Maximum drain-source resistance of 190 milliohms ensures low conduction losses, while the power dissipation limit of 3.9 W helps maintain device integrity during operation. This MOSFET meets the AEC-Q101 automotive standard, indicating its reliability and robustness in automotive and industrial environments.
Operating temperatures range from -55°C to 150°C, allowing reliable performance under harsh conditions. The package dimensions of 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height optimize space usage on circuit boards.
Use cases include industrial electronics, automotive power systems, power converting circuits, and general-purpose electronic applications requiring reliable MOSFET switching performance. This component is essential for engineers designing efficient power control and switching solutions.
The device features an enhancement mode channel type offering reliable switching performance. Maximum drain-source resistance is 190 milliohms, ensuring efficient conduction. Designed for surface mount applications with 4-pin configuration for compact circuit designs.
Supports gate-source voltage range of -20 V to +20 V with a typical gate charge of 7.4 nanocoulombs. Maximum power dissipation rating is 3.9 W, suitable for medium power electronic circuits. Wide operating temperature range from -55°C up to 150°C allows use in varied environments.
Follows automotive standard AEC-Q101, endorsing high reliability in automotive applications. Physical dimensions are 6.7 mm length, 3.7 mm width, and 1.8 mm height for compact layouts. Explore advanced discrete semiconductor devices like the DiodesZetex ZXMN7A11GTA for reliable, efficient power management solutions available at EnvMart.
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