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DiodesZetex N-Channel MOSFET, 3.8 A, 70 V Enhancement Type, 4-Pin SOT-223 ZXMN7A11GTA

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 1.8mm
Length 6.7mm
Model ZXMN7A11GTA
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
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RS Stock No. 708-2501Brand: DiodesZetexManufacturers Part No.: ZXMN7A11GTA
Pin Count 4
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 3.8A
Maximum Drain Source Voltage Vds 70V
Maximum Drain Source Resistance Rds 190mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.9W
Typical Gate Charge Qg @ Vgs 7.4nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 850mV

Key Features

  • The device features an enhancement mode channel type offering reliable switching performance.
  • Maximum drain-source resistance is 190 milliohms, ensuring efficient conduction.
  • Designed for surface mount applications with 4-pin configuration for compact circuit designs.
  • Supports gate-source voltage range of -20 V to +20 V with a typical gate charge of 7.4 nanocoulombs.
  • Maximum power dissipation rating is 3.9 W, suitable for medium power electronic circuits.
  • Wide operating temperature range from -55°C up to 150°C allows use in varied environments.
  • Follows automotive standard AEC-Q101, endorsing high reliability in automotive applications.
  • Physical dimensions are 6.7 mm length, 3.7 mm width, and 1.8 mm height for compact layouts.

Product Description

DiodesZetex ZXMN7A11GTA is an N-Channel MOSFET designed for power management and switching applications in electronic circuits. This device supports a maximum continuous drain current of 3.8 A and a maximum drain-source voltage of 70 V, making it suitable for moderate power loads within various electronic systems.

The MOSFET features a surface-mount 4-pin SOT-223 package which enables efficient heat dissipation and compact assembly on printed circuit boards. Its enhancement mode channel operates with a gate-source voltage range of -20 V to +20 V and typical gate charge of 7.4 nC, facilitating fast switching and low gate drive power consumption.

Maximum drain-source resistance of 190 milliohms ensures low conduction losses, while the power dissipation limit of 3.9 W helps maintain device integrity during operation. This MOSFET meets the AEC-Q101 automotive standard, indicating its reliability and robustness in automotive and industrial environments.

Operating temperatures range from -55°C to 150°C, allowing reliable performance under harsh conditions. The package dimensions of 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height optimize space usage on circuit boards.

Use cases include industrial electronics, automotive power systems, power converting circuits, and general-purpose electronic applications requiring reliable MOSFET switching performance. This component is essential for engineers designing efficient power control and switching solutions.

The device features an enhancement mode channel type offering reliable switching performance. Maximum drain-source resistance is 190 milliohms, ensuring efficient conduction. Designed for surface mount applications with 4-pin configuration for compact circuit designs.

Supports gate-source voltage range of -20 V to +20 V with a typical gate charge of 7.4 nanocoulombs. Maximum power dissipation rating is 3.9 W, suitable for medium power electronic circuits. Wide operating temperature range from -55°C up to 150°C allows use in varied environments.

Follows automotive standard AEC-Q101, endorsing high reliability in automotive applications. Physical dimensions are 6.7 mm length, 3.7 mm width, and 1.8 mm height for compact layouts. Explore advanced discrete semiconductor devices like the DiodesZetex ZXMN7A11GTA for reliable, efficient power management solutions available at EnvMart.

DiodesZetex N-Channel MOSFET, 3.8 A, 70 V Enhancement Type, 4-Pin SOT-223 ZXMN7A11GTA
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Frequently Asked Questions

The maximum continuous drain current for the ZXMN7A11GTA is 3.8 A.

This model supports a maximum drain-source voltage of 70 V.

The maximum power dissipation rating is 3.9 W, suitable for medium power electronic circuits.

It supports a gate-source voltage range of -20 V to +20 V.

The dimensions are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

The maximum drain-source resistance is 190 milliohms.

The typical gate charge is 7.4 nanocoulombs.

The operating temperature range is from -55°C to 150°C.

It follows the automotive standard AEC-Q101, indicating high reliability in automotive applications.

This MOSFET comes in a surface-mount 4-pin SOT-223 package.

It features an enhancement mode N-channel type.

This model is suitable for industrial electronics, automotive power systems, and general-purpose electronic applications requiring reliable MOSFET switching performance.

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