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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | SUP57N20-33-E3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | SUP57N20-33 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
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| RS Stock No. | 708-5014Brand: VishayManufacturers Part No.: SUP57N20-33-E3 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 90nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Vishay SUP57N20-33-E3 is a high-performance N-Channel MOSFET designed for applications requiring a maximum continuous drain current of 57 A and a drain-source voltage of 200 V. Packaged in a 3-pin TO-220 through-hole package, it provides mechanical stability and ease of mounting on PCBs or heat sinks.
This MOSFET operates in enhancement mode, delivering low on-resistance (33 milliohms maximum) which ensures minimal conduction losses and high efficiency in power switching operations. It can dissipate up to 3.75 watts of power, making it suitable for medium power electronic and industrial circuits.
Its robust design supports a wide operating temperature range from -55°C to 175°C, accommodating demanding industrial and commercial environments. The typical gate charge of 90 nC and maximum gate-source voltage ratings of -20 V to +20 V enable swift and reliable switching control.
The device's physical dimensions of approximately 10.41 mm length, 9.01 mm height, and 4.7 mm width simplify integration in compact designs. With a forward voltage of about 1 volt, this MOSFET balances switching speed and efficiency effectively.
High continuous drain current of 57 A for heavy load applications. TO-220 package ensures effective heat dissipation and mechanical stability. Enhancement mode operation for efficient switching and low power loss. Wide operating temperature range suitable for industrial environments.
Low maximum drain-source resistance reduces conduction losses. Maximum power dissipation of 3.75 W supports reliable operation under load. Typical gate charge of 90 nC enables fast switching responses. High voltage tolerance on gate-source pins enhances durability.
Compact package dimensions aid design flexibility. Forward voltage around 1 V for efficient conduction.
This MOSFET is widely applicable in industrial power control, electronic power supplies, motor drivers, and other switching applications requiring reliable high current and voltage performance.
Explore more advanced semiconductor and MOSFET solutions in the Electronics & Electricals category at EnvMart to meet diverse industrial needs.
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