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Vishay N-Channel MOSFET 57 A, 200 V Enhancement, 3-Pin TO-220 SUP57N20-33-E3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model SUP57N20-33-E3
Width 4.7mm
Mount Type Through Hole
Series SUP57N20-33
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
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RS Stock No. 708-5014Brand: VishayManufacturers Part No.: SUP57N20-33-E3
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 57A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 33mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3.75W
Typical Gate Charge Qg @ Vgs 90nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1V

Key Features

  • High continuous drain current rating of 57 amperes for demanding applications.
  • Durable TO-220 through-hole package with 3 pins for reliable mounting.
  • Enhancement mode channel operation for efficient switching performance.
  • Low maximum drain-source resistance of 33 milliohms to minimize power loss.
  • Capable of operating within a wide temperature range from -55°C to 175°C.
  • Maximum power dissipation of 3.75 watts for thermal management.
  • Typical gate charge of 90 nanoCoulombs to optimize gate drive requirements.
  • Maximum gate-source voltage tolerance of ±20 volts for robust control.

Product Description

Vishay SUP57N20-33-E3 is a high-performance N-Channel MOSFET designed for applications requiring a maximum continuous drain current of 57 A and a drain-source voltage of 200 V. Packaged in a 3-pin TO-220 through-hole package, it provides mechanical stability and ease of mounting on PCBs or heat sinks.

This MOSFET operates in enhancement mode, delivering low on-resistance (33 milliohms maximum) which ensures minimal conduction losses and high efficiency in power switching operations. It can dissipate up to 3.75 watts of power, making it suitable for medium power electronic and industrial circuits.

Its robust design supports a wide operating temperature range from -55°C to 175°C, accommodating demanding industrial and commercial environments. The typical gate charge of 90 nC and maximum gate-source voltage ratings of -20 V to +20 V enable swift and reliable switching control.

The device's physical dimensions of approximately 10.41 mm length, 9.01 mm height, and 4.7 mm width simplify integration in compact designs. With a forward voltage of about 1 volt, this MOSFET balances switching speed and efficiency effectively.

High continuous drain current of 57 A for heavy load applications. TO-220 package ensures effective heat dissipation and mechanical stability. Enhancement mode operation for efficient switching and low power loss. Wide operating temperature range suitable for industrial environments.

Low maximum drain-source resistance reduces conduction losses. Maximum power dissipation of 3.75 W supports reliable operation under load. Typical gate charge of 90 nC enables fast switching responses. High voltage tolerance on gate-source pins enhances durability.

Compact package dimensions aid design flexibility. Forward voltage around 1 V for efficient conduction.

This MOSFET is widely applicable in industrial power control, electronic power supplies, motor drivers, and other switching applications requiring reliable high current and voltage performance.

Explore more advanced semiconductor and MOSFET solutions in the Electronics & Electricals category at EnvMart to meet diverse industrial needs.

Vishay N-Channel MOSFET 57 A, 200 V Enhancement, 3-Pin TO-220 SUP57N20-33-E3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SUP57N20-33-E3 is 57 A.

This model has a maximum drain-source voltage rating of 200 V.

The maximum power dissipation for this MOSFET is 3.75 W.

The typical gate charge is 90 nanoCoulombs (nC).

This MOSFET can tolerate a maximum gate-source voltage of ±20 V.

The physical dimensions are approximately 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.

It is packaged in a TO-220 through-hole package.

The operating temperature range is from -55°C to 175°C.

This model uses an enhancement mode N-channel.

The maximum drain-source resistance is 33 milliohms (mΩ).

This MOSFET has 3 pins.

It is suitable for applications such as industrial power control, electronic power supplies, and motor drivers.

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