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Toshiba TK N-Channel MOSFET, 15 A, 500 V Enhancement Mode, 3-Pin TO-3PN TK15J50D(F)

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Toshiba TK N-Channel MOSFET, 15 A, 500 V Enhancement Mode, 3-Pin TO-3PN TK15J50D(F)

Name: Toshiba TK N-Channel MOSFET, 15 A, 500 V Enhancement Mode, 3-Pin TO-3PN TK15J50D(F)
Brand: Toshiba
SKU: 351960
Price: 1.68 USD
Availability: InStock

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Category MOSFETs Brand Toshiba Condition New

Specifications

Country of Origin	Japan
Brand	Toshiba
Height	19mm
Length	40.5mm
Model	TK15J50D(F)
Width	4.8mm
Mount Type	Through Hole
Series	TK
Maximum Operating Temperature	150°C
Package Type	TO-3PN
Minimum Operating Temperature	-55°C
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RS Stock No.	695-5385Brand: ToshibaManufacturers Part No.: TK15J50D(F)
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	15A
Maximum Drain Source Voltage Vds	500V
Maximum Drain Source Resistance Rds	400mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	210W
Typical Gate Charge Qg @ Vgs	38nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	-1.7V

Key Features

Enhancement mode MOSFET designed for high voltage switching applications.
TO-3PN package with 3 pins suitable for through-hole mounting.
Maximum power dissipation rating is 210 watts.
Typical gate charge is 38 nC at gate-source voltage threshold.
Operating temperature ranges from -55°C to 150°C ensuring robust performance.
Maximum drain-source resistance is 400 milliohms providing efficient conduction.
Features 19 mm height, 40.5 mm length, and 4.8 mm width for compact footprint.
Maximum gate-source voltage ±30 V for reliable gate control.

Product Description

Toshiba TK15J50D(F) is a high-performance N-Channel enhancement mode MOSFET designed for power electronics applications requiring efficient switching and high voltage tolerance. It delivers a maximum continuous drain current of 15 A and can withstand a maximum drain-source voltage of 500 V, making it suitable for robust industrial and electronic circuit designs.

This device is housed in a durable TO-3PN package featuring 3 pins and a through-hole mount type for ease of integration into various printed circuit boards and assemblies. Its maximum power dissipation rating is 210 W, allowing it to manage significant thermal loads in power management systems.

The MOSFET exhibits a typical gate charge of 38 nC at the specified gate-source voltage, enabling fast switching with low gate drive power. Its maximum drain-source resistance of 400 milliohms ensures low conduction losses, improving overall efficiency in switching circuits.

Physical dimensions of 19 mm height, 40.5 mm length, and 4.8 mm width provide a compact form factor suitable for space-constrained electronic devices. Its operating temperature range from -55°C to 150°C ensures reliable performance even in harsh industrial, automotive, and electronics environments.

Enhancement mode N-Channel configuration for precise control. High durability and power handling in TO-3PN package. Suitable for industrial, automotive, electronic power control, and switching applications. Manufactured in Japan ensuring premium quality standards.

Compatible with standard through-hole PCB mounting techniques. Robust electrical and thermal specifications for reliability. Supports design needs for power supplies, motor drives, and converters.

This MOSFET is ideal for engineers and designers in electronics manufacturing, industrial automation, power conversion, and other high-performance electronics applications. Browse more MOSFET and discrete semiconductor devices to find complementary components for your projects at EnvMart.

Explore more products in our MOSFETs category.