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DiodesZetex PNP Transistor , -100 mA Collector Current, -65 V Collector Emitter Voltage, 200 mW Power BC856BW-7-F

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model BC856BW-7-F
Width 2.2mm
Mount Type Surface
Series BC856BW
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 220
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Maximum DC collector current of -100 mA ensures efficient transistor switching.
  • Supports maximum collector emitter voltage of -65 V suitable for various applications.
  • Compact 3-pin SOT-323 surface mount package for space-saving PCB designs.
  • Low power dissipation rating of 200 mW enhances device reliability.
  • High minimum DC current gain (hFE) of 220 for better amplification performance.
  • Operates in temperature range from -55°C to 150°C for robust industrial use.
  • Maximum transition frequency of 200 MHz supporting high frequency circuit applications.
  • Complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101 for enhanced quality.

Product Description

DiodesZetex BC856BW-7-F is a high-quality small signal PNP bipolar transistor designed for surface mount applications. Featuring a maximum DC collector current of -100 mA and maximum collector emitter voltage of -65 V, this transistor is ideal for amplification and switching in electronic circuits, especially in compact designs requiring the space-efficient 3-pin SOT-323 package.

Its low power dissipation rating of 200 mW helps maintain thermal stability during operation. With a minimum DC current gain (hFE) of 220, it provides reliable amplification, while its maximum transition frequency of 200 MHz supports operation in high-frequency circuits such as RF amplifiers and signal processing.

The device is engineered to operate across a wide temperature range from -55°C minimum to 150°C maximum, making it suitable for demanding industrial and automotive environments. Compliance with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101 ensures it meets stringent reliability and quality criteria for automotive electronics applications.

The compact physical dimensions of 2.2 mm in length and width, and 1.1 mm in height enable efficient PCB layout and miniaturization. This transistor is supplied new and packaged on reels, ready for automated insertion, facilitating high-volume manufacturing and assembly efficiency.

Common application domains include industrial automation, automotive control systems, communication equipment, and consumer electronics requiring robust switching and amplification performance in a small form factor.

Choose DiodesZetex BC856BW-7-F transistor for your surface mount bipolar transistor needs where quality, compliance, and size are critical factors. Explore more bipolar transistor products and accessories at EnvMart.

Maximum DC collector current of -100 mA ensures efficient transistor switching. Supports maximum collector emitter voltage of -65 V suitable for various applications. Compact 3-pin SOT-323 surface mount package for space-saving PCB designs.

Low power dissipation rating of 200 mW enhances device reliability. High minimum DC current gain (hFE) of 220 for better amplification performance. Operates in temperature range from -55°C to 150°C for robust industrial use.

Maximum transition frequency of 200 MHz supporting high frequency circuit applications. Complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101 for enhanced quality. Dimensions are 2.2 mm length, 2.2 mm width, and 1.1 mm height for easy footprint planning.

Manufactured in China and delivered new in sealed packaging. Browse our comprehensive selection of Bipolar Transistors at EnvMart for advanced electronic components solutions.

DiodesZetex PNP Transistor , -100 mA Collector Current, -65 V Collector Emitter Voltage, 200 mW Power BC856BW-7-F
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Frequently Asked Questions

The maximum DC collector current for this model is -100 mA, which ensures efficient transistor switching.

It supports a maximum collector emitter voltage of -65 V, making it suitable for various applications.

This transistor comes in a compact 3-pin SOT-323 surface mount package, ideal for space-saving PCB designs.

The BC856BW-7-F has a low power dissipation rating of 200 mW, which enhances device reliability during operation.

It features a minimum DC current gain (hFE) of 220, providing better amplification performance.

This model operates in a temperature range from -55°C to 150°C, making it suitable for robust industrial use.

The maximum transition frequency is 200 MHz, supporting high-frequency circuit applications.

It complies with automotive standards AEC-Q200, AEC-Q100, and AEC-Q101, ensuring enhanced quality for automotive applications.

The dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, allowing for efficient PCB layout.

The maximum emitter base voltage (VEBO) is -5 V for this model.

It has a maximum collector base voltage (VCBO) of -80 V.

This model is a single PNP transistor configuration, suitable for various electronic applications.

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