onsemi N-Channel MOSFET 200 mA 60 V Enhancement Mode 3-Pin TO-92 2N7000

onsemi 2N7000 N-Channel MOSFET is a high-performance enhancement mode transistor designed using proprietary high cell density DMOS technology. It offers low on-state resistance, rugged reliability, and fast switching capabilities, making it suitable for various industrial and electronic applications.

This MOSFET supports a maximum continuous drain current of 200 mA and a drain-source voltage of 60 V, ensuring robust handling of electrical loads in circuits. Its low drain-source resistance of 5 Ω helps minimize power loss and improve efficiency.

The device comes in a TO-92 package with a through-hole mount and three pins for easy integration into PCBs. It efficiently dissipates up to 400 mW of power and operates across a wide temperature range from -55°C to 150°C, supporting use in harsh industrial environments.

Typical gate charge is 0.8 nC at gate-source voltage, offering quick switching characteristics crucial for high-speed electronics. The transistor's maximum gate-source voltage rating is -20 V to +20 V, providing robust protection against voltage spikes. The forward voltage of 880 mV supports efficient switching performance.

Compact physical dimensions (length 5.2 mm, width 4.19 mm, height 5.33 mm) make it suitable for dense electronic assemblies. Applications include industrial controls, power management circuits, instrumentation, and consumer electronics requiring reliable MOSFET switching components.

This MOSFET supports a maximum continuous drain current of 200 mA. Maximum drain-source voltage rating is 60 V for robust load handling. Low drain-source resistance (Rds) of 5 Ω minimizes power loss. TO-92 package type with three pins facilitates easy mounting.

Enhancement mode operation with typical gate charge of 0.8 nC ensures fast switching. Power dissipation capability of 400 mW supports stable thermal performance. Wide operating temperature range from -55°C to 150°C suits industrial applications.

Maximum gate-source voltage rating from -20 V to +20 V protects against voltage spikes. Physical compactness with dimensions 5.2 mm x 4.19 mm x 5.33 mm. Forward voltage of 880 mV supports efficient switching.

This onsemi 2N7000 transistor is ideal for electronic, industrial, and manufacturing use cases requiring a reliable N-Channel MOSFET with enduring performance across temperature extremes and load conditions. Explore the extensive catalog of semiconductor components at EnvMart for complementary products and solutions.