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onsemi N-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin SOT-23 NDS7002A

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onsemi N-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin SOT-23 NDS7002A

Name: onsemi N-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin SOT-23 NDS7002A
Brand: onsemi
SKU: 347542
Price: 0.11 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	930μm
Length	2.92mm
Model	NDS7002A
Width	1.3mm
Mount Type	Surface
Series	NDS7002A
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	280mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	2Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Typical Gate Charge Qg @ Vgs	1.2nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	880mV

Key Features

This MOSFET uses a surface mount SOT-23 package with 3 pins for compact applications.
The device features a maximum drain-source resistance of 2 ohms for efficient conduction.
Maximum power dissipation is rated at 300 mW, suitable for low power switching.
Operating temperature ranges from -65°C to +150°C, ensuring reliability in diverse environments.
Typical gate charge is 1.2 nC at Vgs, enabling fast switching speeds.
Maximum gate-source voltage allowed is ±20 V for safe operation.
Physical dimensions are compact with a length of 2.92 mm, width of 1.3 mm, and height of 930 μm.
No automotive or specific industry standard approvals are present for this device.

Product Description

The onsemi NDS7002A is a robust enhancement mode N-Channel MOSFET designed for efficient power switching applications, featuring a maximum continuous drain current of 280 mA and a drain-source voltage rating of 60 V. Manufactured in a compact 3-pin SOT-23 surface mount package, it is ideal for space-constrained electronic designs.

Its low maximum drain-source resistance of 2 ohms enables reduced power loss and improved efficiency. With a maximum power dissipation of 300 mW and operating temperature range from -65°C to 150°C, the device ensures reliable performance across industrial, automotive (non-certified), and consumer electronics environments.

The typical gate charge of 1.2 nC allows for swift switching, crucial for high-speed circuits. The gate-source voltage rating of ±20 V protects the device from excessive voltage stress.

Physically, the NDS7002A measures 2.92 mm in length, 1.3 mm in width, and has a height of 930 μm, making it suitable for compact electronic assemblies in industrial, consumer electronics, and manufacturing applications.

This MOSFET provides low on-resistance for efficient conduction. The component supports high switching speeds due to low gate charge. Surface mount package facilitates automated PCB assembly. Wide operating temperature range supports harsh environment usage.

The device does not carry automotive specific certifications but is designed for general electronic use. Compact dimensions allow integration in tight circuit layouts. Suitable for power management and switching in industrial and commercial electronic devices.

Explore more onsemi MOSFETs and power semiconductors on EnvMart to find components that fit your electronic design requirements.