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onsemi P-Channel Enhancement Mode MOSFET, 5.7 A, 200 V, 3-Pin TO-252 Surface Mount FQD7P20TM

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.3mm
Length 6.6mm
Model FQD7P20TM
Width 6.1mm
Mount Type Surface
Series FQD7P20TM
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 5.7A
Maximum Drain Source Voltage Vds 200V
Maximum Drain Source Resistance Rds 690mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.5W
Typical Gate Charge Qg @ Vgs 19nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf -5V
Vishay P-Channel MOSFET, 3.6 A, 200 V, 3-Pin DPAK IRFR9220PBFBrand Vishay

Key Features

  • Operates with a maximum continuous drain current of 5.7 amperes.
  • Capable of handling a maximum drain-source voltage of 200 volts.
  • Features a low on-resistance of 690 milliohms for low power loss.
  • Packaged in a compact TO-252 3-pin surface mount design.
  • Supports a maximum power dissipation of 2.5 watts for reliable operation.
  • Robust operation in temperature range from -55°C to 150°C.
  • Utilizes DMOS technology for high cell density and superior switching performance.
  • Applications include DC/DC converters, battery protection, motor control, and power management.

Product Description

onsemi FQD7P20TM is a P-Channel MOSFET transistor featuring enhancement mode operation and a 3-pin TO-252 surface mount package. It delivers a maximum continuous drain current of 5.7 amperes and can withstand a maximum drain-source voltage of 200 volts, making it suitable for various industrial and electronic circuit applications.

Manufactured using onsemi's proprietary high-density DMOS technology, this MOSFET offers low on-state resistance, minimizing conduction losses and ensuring efficient power handling. Its maximum drain-source resistance of 690 milliohms contributes to energy-efficient switching and power control.

Operating over a wide temperature range (-55°C to 150°C), it is designed for rugged and reliable performance in demanding conditions. The maximum power dissipation of 2.5 watts supports stable operation under typical load scenarios, while the typical gate charge of 19 nanocoulombs ensures fast switching capabilities.

This MOSFET is ideal for industrial, electronic, and power management applications including load switching, DC/DC converters, battery protection circuits, and DC motor speed control. The 3-pin TO-252 surface mount package supports easy PCB integration in compact layouts.

Key features include voltage-controlled P-Channel switching, superior switching speed, and enhanced ruggedness, making the onsemi FQD7P20TM a versatile component for power semiconductor designs.

Operates with a maximum continuous drain current of 5.7 amperes. Capable of handling a maximum drain-source voltage of 200 volts. Features a low on-resistance of 690 milliohms for low power loss. Packaged in a compact TO-252 3-pin surface mount design.

Supports a maximum power dissipation of 2.5 watts for reliable operation. Robust operation in temperature range from -55°C to 150°C. Utilizes DMOS technology for high cell density and superior switching performance. Applications include DC/DC converters, battery protection, motor control, and power management.

Explore our Electronics & Electricals category for a broad range of power semiconductors and discrete MOSFET components from leading brands like onsemi at EnvMart.

onsemi P-Channel Enhancement Mode MOSFET, 5.7 A, 200 V, 3-Pin TO-252 Surface Mount FQD7P20TM
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Frequently Asked Questions

It operates with a maximum continuous drain current of 5.7 amperes.

The maximum drain-source voltage it can withstand is 200 volts.

It features a low on-resistance of 690 milliohms, which helps minimize power loss.

The maximum power dissipation supported by this MOSFET is 2.5 watts.

It operates reliably over a temperature range from -55°C to 150°C.

It is packaged in a compact TO-252 3-pin surface mount design.

The typical gate charge is 19 nanocoulombs.

It is suitable for applications including DC/DC converters, battery protection, motor control, and power management.

This model has a height of 2.3 mm, a length of 6.6 mm, and a width of 6.1 mm.

The channel type of this device is P-Channel.

The maximum gate-source voltage is -30V to +30V.

The country of origin for this product is India.

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