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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.6mm |
| Length | 6.5mm |
| Model | NDT3055L |
| Width | 3.56mm |
| Mount Type | Surface |
| Series | NDT |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
onsemi NDT3055L N-Channel Enhancement Mode MOSFET is a high-density DMOS transistor designed for enhanced performance in power switching applications. Packaged in a compact 4-pin SOT-223 surface mount package, this MOSFET supports a maximum continuous drain current of 4 A and can tolerate up to 60 V drain-source voltage.
The enhancement mode operation allows for excellent switching characteristics, making this device suitable for various industrial, electronic component, and power management applications. Its low on-resistance of 100 milliohms reduces conduction losses, enhancing overall efficiency.
Suitable for use in demanding temperature conditions ranging from -65°C to 150°C, the NDT3055L provides robust performance in industrial electronics, power supplies, motor control circuits, and other electrical systems requiring efficient power switching.
The device features a typical gate charge of 13 nC enabling fast switching speeds, a forward voltage drop of 1.2 V, and a maximum power dissipation rating of 3 W to ensure safe operation within power limits.
Physical dimensions of 6.5 mm length, 3.56 mm width, and 1.6 mm height enable its integration into compact and high-density circuit boards. Enhancement mode N-Channel transistor ensuring improved ruggedness and performance.
4 A continuous drain current and 60 V drain-source voltage ratings cater to medium power applications. Surface mount SOT-223 package designed for efficient PCB assembly and thermal performance. Wide operating temperature range from -65°C to 150°C suitable for harsh industrial environments.
Low on-state resistance minimizes power losses during device conduction. Fast switching via typical 13 nC gate charge facilitates efficient power conversion. Maximum power dissipation of 3 W supports reliable operation under load.
Compact physical size enables usage in space-constrained electronic designs.
This onsemi NDT3055L MOSFET is ideal for use in power electronics, industrial equipment, automotive electronics, and consumer electronics where reliable switching and efficient power management are required. EnvMart offers this product for professionals and industries seeking high-quality semiconductor discrete components.
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