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onsemi N-Channel Enhancement Mode MOSFET 4 A 60 V Surface Mount SOT-223 4-Pin NDT3055L

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.6mm
Length 6.5mm
Model NDT3055L
Width 3.56mm
Mount Type Surface
Series NDT
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -65°C
Pin Count 4
Channel Type N
Maximum Continuous Drain Current Id 4A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 100mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 3W
Typical Gate Charge Qg @ Vgs 13nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • Utilizes enhancement mode operation for efficient switching performance.
  • Surface mount SOT-223 package with 4 pins for easy PCB integration.
  • Maximum continuous drain current of 4 A supports medium power applications.
  • Maximum drain-source voltage rating of 60 V ensures suitable voltage tolerance.
  • Low on-resistance of 100 milliohms minimizes power loss during conduction.
  • Supports a wide operating temperature range from -65°C to 150°C for rugged environments.
  • Typical gate charge of 13 nC enables fast switching capabilities.
  • Maximum power dissipation of 3 W ensures reliability under load.

Product Description

onsemi NDT3055L N-Channel Enhancement Mode MOSFET is a high-density DMOS transistor designed for enhanced performance in power switching applications. Packaged in a compact 4-pin SOT-223 surface mount package, this MOSFET supports a maximum continuous drain current of 4 A and can tolerate up to 60 V drain-source voltage.

The enhancement mode operation allows for excellent switching characteristics, making this device suitable for various industrial, electronic component, and power management applications. Its low on-resistance of 100 milliohms reduces conduction losses, enhancing overall efficiency.

Suitable for use in demanding temperature conditions ranging from -65°C to 150°C, the NDT3055L provides robust performance in industrial electronics, power supplies, motor control circuits, and other electrical systems requiring efficient power switching.

The device features a typical gate charge of 13 nC enabling fast switching speeds, a forward voltage drop of 1.2 V, and a maximum power dissipation rating of 3 W to ensure safe operation within power limits.

Physical dimensions of 6.5 mm length, 3.56 mm width, and 1.6 mm height enable its integration into compact and high-density circuit boards. Enhancement mode N-Channel transistor ensuring improved ruggedness and performance.

4 A continuous drain current and 60 V drain-source voltage ratings cater to medium power applications. Surface mount SOT-223 package designed for efficient PCB assembly and thermal performance. Wide operating temperature range from -65°C to 150°C suitable for harsh industrial environments.

Low on-state resistance minimizes power losses during device conduction. Fast switching via typical 13 nC gate charge facilitates efficient power conversion. Maximum power dissipation of 3 W supports reliable operation under load.

Compact physical size enables usage in space-constrained electronic designs.

This onsemi NDT3055L MOSFET is ideal for use in power electronics, industrial equipment, automotive electronics, and consumer electronics where reliable switching and efficient power management are required. EnvMart offers this product for professionals and industries seeking high-quality semiconductor discrete components.

onsemi N-Channel Enhancement Mode MOSFET 4 A 60 V Surface Mount SOT-223 4-Pin NDT3055L
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Frequently Asked Questions

The NDT3055L MOSFET supports a maximum continuous drain current of 4 A.

It has a maximum drain-source voltage rating of 60 V.

The typical gate charge is 13 nC, which enables fast switching capabilities.

The NDT3055L features a low on-resistance of 100 milliohms, minimizing power loss during conduction.

The physical dimensions of this model are 6.5 mm in length, 3.56 mm in width, and 1.6 mm in height.

This MOSFET operates within a wide temperature range from -65°C to 150°C.

It is packaged in a surface mount SOT-223 package with 4 pins for easy PCB integration.

The maximum power dissipation is rated at 3 W, ensuring reliable operation under load.

This model is suitable for power electronics, industrial equipment, automotive electronics, and consumer electronics requiring efficient power management.

The forward voltage drop is 1.2 V.

It is an N-channel enhancement mode MOSFET, designed for efficient switching performance.

The maximum gate-source voltage is rated at -20 V to +20 V.

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