onsemi Type P-Channel Enhancement Mode MOSFET 5.7 A, 200 V, 3-Pin TO-252 Package FQD7P20TM

onsemi FQD7P20TM is a Type P-Channel Enhancement Mode MOSFET designed for power and switching applications. With a maximum continuous drain current of 5.7 A and a drain-source voltage rating of 200 V, this device operates efficiently in surface mount TO-252 packages.

The MOSFET features a high density cell design which minimizes on-resistance, providing superior switching performance and rugged reliability. It supports a maximum power dissipation of 2.5 W and operates safely across a broad temperature range of -55°C to 150°C, making it suitable for industrial, automotive, and commercial electronic circuits.

The typical gate charge of 19 nC allows for fast switching transitions which benefits applications requiring dynamic load control. Its gate-source voltage rating of -30 V to +30 V expands flexibility in driving schemes, while the maximum drain-source resistance of 690 mΩ reduces conduction losses.

The compact 3-pin TO-252 surface mount package has precise dimensions of 6.6 mm in length, 6.1 mm in width, and 2.3 mm in height, enabling efficient PCB layout for space-constrained designs.

Typical use cases include load switching, DC/DC converters, battery protection circuits, power management control, and DC motor control in industrial and electronic devices. onsemi employs proprietary DMOS technology to deliver a rugged and reliable MOSFET transistor suitable for high saturation current and switching demands.

Voltage controlled P-Channel small signal switch ideal for efficient power management. High-density cell design minimizes on-state resistance for rugged performance. Maximum power dissipation rating of 2.5 W supports reliable thermal management.

Wide operating temperature range from -55°C to 150°C for versatile applications. Typical gate charge of 19 nC enables fast switching speeds. Surface mount TO-252 package with compact dimensions: 6.6 mm length, 6.1 mm width, and 2.3 mm height.

Maximum drain-source resistance of 690 mΩ ensures low conduction losses. Maximum gate-source voltage tolerance of -30 V to +30 V for flexible gate drive options. Applications include load switching, DC/DC converters, battery protection, and DC motor control.

Manufactured using ON Semiconductor's proprietary DMOS technology for high reliability and ruggedness. Explore our Electronics & Electricals category for high-quality MOSFETs and other semiconductor components on EnvMart.