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onsemi QFET N-Channel MOSFET 100 V 55 A Enhancement Mode 3-Pin TO-263 FQB55N10TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | FQB55N10TM |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 26mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 75nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.5V |
Key Features
- Features low on-resistance of 26 milliohms for efficient power conduction.
- Supports a maximum power dissipation of 3.75 W, suitable for moderate power applications.
- Operates across a wide temperature range from -55°C to 175°C.
- Includes a typical gate charge of 75 nanocoulombs for fast switching performance.
- Equipped with a maximum gate-source voltage tolerance of -25 V to +25 V.
- Compact TO-263 package dimensions enable surface mount application.
- Designed for use in power supplies, DC-DC converters, and motion control systems.
- Delivers reduced switching losses with advanced QFET planar MOSFET technology.
Product Description
onsemi FQB55N10TM is a high-performance QFET N-Channel MOSFET designed for industrial and electronic applications requiring efficient power switching and amplification. Packaged in a 3-Pin TO-263 surface mount package, it supports a maximum continuous drain current of 55 A and a drain-source voltage rating of 100 V, making it suitable for demanding power electronics.
This MOSFET features low on-resistance of 26 milliohms, which minimizes conduction losses, thereby enhancing overall system efficiency. It operates effectively over a wide temperature range from -55°C to 175°C, supporting reliability in harsh industrial environments.
The device incorporates an enhancement mode channel type with a typical gate charge of 75 nC, enabling fast switching capabilities critical for power supply and DC-DC converter applications. It is rated for a maximum gate-source voltage of -25 V to +25 V, offering robust control over switching operations.
The compact TO-263 package (dimensions approximately 10.67 mm length, 9.65 mm width, and 4.83 mm height) facilitates surface mounting, optimizing board space in electronic assemblies.
Applications for the onsemi FQB55N10TM include power supplies, power factor correction circuits, plasma display panels, lighting ballasts, and motion control systems, where efficiency and durability are paramount.
The device utilizes advanced QFET planar MOSFET technology, which reduces switching losses and improves the figure of merit, delivering superior performance compared to conventional planar MOSFETs.
Features low on-resistance of 26 milliohms for efficient power conduction. Supports a maximum power dissipation of 3.75 W, suitable for moderate power applications. Operates across a wide temperature range from -55°C to 175°C.
Includes a typical gate charge of 75 nanocoulombs for fast switching performance. Equipped with a maximum gate-source voltage tolerance of -25 V to +25 V. Compact TO-263 package dimensions enable surface mount application.
Designed for use in power supplies, DC-DC converters, and motion control systems. Delivers reduced switching losses with advanced QFET planar MOSFET technology. Includes a forward voltage of 1.5 V to optimize conduction efficiency.
Explore the comprehensive portfolio of onsemi MOSFETs for efficient power management solutions available at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
It has a maximum drain-source voltage rating of 100 V.
The low on-resistance value is 26 milliohms, which helps minimize conduction losses.
The typical gate charge is 75 nanocoulombs, enabling fast switching performance.
This unit operates effectively over a wide temperature range from -55°C to 175°C.
The TO-263 package dimensions are approximately 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The maximum power dissipation supported by this model is 3.75 W.
It is equipped with a maximum gate-source voltage tolerance of -25 V to +25 V.
This model is designed for applications such as power supplies, DC-DC converters, and motion control systems.
The forward voltage is 1.5 V, which optimizes conduction efficiency.
This device utilizes an enhancement mode N-channel type.
It features a surface mount type for easy integration into electronic assemblies.
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