onsemi Isolated PowerTrench 2 Type P-Channel MOSFET 7 A 30 V Enhancement 8-Pin SOIC FDS4935A

onsemi FDS4935A Isolated PowerTrench 2 Type P-Channel MOSFET is a high-performance discrete semiconductor device designed for efficient power switching applications in industrial, electronic, and power management systems. It supports a maximum continuous drain current of 7 A and a drain-source voltage of 30 V, making it ideal for medium-power circuits.

The device belongs to the PowerTrench series, which optimizes system efficiency by combining small gate charge, minimal reverse recovery charge, and a soft reverse recovery body diode. This design facilitates faster switching speeds and reduced power loss, enhancing overall power density.

Its isolated transistor configuration and enhancement channel mode make it suitable for synchronous rectification in AC/DC power supplies and other power electronics. The MOSFET comes in an 8-pin SOIC surface mount package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, supporting ease of integration in densely packed PCBs.

Key protection characteristics include a wide maximum gate-source voltage range (-20 V to +20 V) and a high maximum operating temperature rating of 175°C, ensuring durability in demanding conditions. Typical gate charge of 15 nC enables efficient switching behavior, and the low maximum drain-source resistance of 23 mΩ minimizes conduction losses.

This product complies with no specific standards or automotive approvals but is engineered for reliable performance in various industrial and electronic applications such as power converters, motor control, and general high-efficiency power management.

Offers a maximum continuous drain current of 7 A for robust power handling. Supports a maximum drain-source voltage of 30 V, suitable for moderate voltage circuits. Enhancement mode channel with isolated transistor configuration ensures efficient switching.

Maximum power dissipation rated at 2 W for reliable thermal performance. Features a low maximum drain-source resistance of 23 mΩ for reduced power loss. Designed with the PowerTrench series technology for increased system efficiency and power density.

Supports a maximum operating temperature of 175°C for durable industrial applications. Package type is SOIC with a compact footprint of 5 mm length, 4 mm width, and 1.5 mm height. Typical gate charge is 15 nC, enabling fast switching speeds in power management circuits.

Maximum gate-source voltage range from -20 V to +20 V protects the device in harsh conditions. Browse the Electronics & Electricals category at EnvMart for onsemi MOSFETs and related semiconductor devices for advanced electronic designs.