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onsemi QFET N-Channel MOSFET 23A 600V Enhancement 3-Pin TO-3PN FQA24N60
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 18.9mm |
| Length | 15.8mm |
| Model | FQA24N60 |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-3PN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 240mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 310W |
| Typical Gate Charge Qg @ Vgs | 110nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
Key Features
- Features a maximum continuous drain current of 23 amperes.
- Supports a maximum drain-source voltage of 600 volts for robust power management.
- Equipped with a TO-3PN 3-pin through-hole package for secure mounting.
- Offers a low maximum drain-source resistance of 240 milliohms for reduced power loss.
- Capable of dissipating up to 310 watts of power ensuring reliable thermal management.
- Operates in a temperature range from -55°C minimum to 150°C maximum.
- Designed with a typical gate charge of 110 nanocoulombs to minimize switching losses.
- Maximum gate-source voltage range of -30 to +30 volts for versatile control.
Product Description
onsemi FQA24N60 N-Channel MOSFET 23A 600V TO-3PN is a high-performance enhancement mode transistor engineered for efficient power switching in various industrial and electronic applications.
This MOSFET features a maximum continuous drain current rating of 23 amperes and a robust drain-source voltage capacity of 600 volts, making it suitable for power supplies, DC-DC converters, and power factor correction circuits.
Its TO-3PN package offers three pins and through-hole mounting ensuring durable mechanical stability and ease of integration on PCBs.
The device maintains low on-state resistance (240 milliohms) to effectively reduce conduction losses and dissipate up to 310 watts, enabling stable operation under demanding thermal conditions.
It supports a wide operating temperature range from -55°C to 150°C, suitable for harsh environmental conditions often encountered in industrial and automotive electronics. The typical gate charge of 110 nanocoulombs facilitates fast switching speeds and minimized switching losses, important for high-frequency power electronics.
Gate-source voltage tolerance ranges from -30V to +30V, providing flexible and robust gate drive requirements. Maximum continuous drain current of 23A ensures high current capability. High voltage rating of 600V suitable for heavy-duty power applications.
TO-3PN 3-pin through-hole package for reliable mounting. Low drain-source resistance reduces power loss and improves efficiency. High power dissipation capacity of 310W allows for effective thermal management. Wide operating temperature range from -55°C to 150°C for extreme conditions.
Low typical gate charge minimizes switching losses at high frequencies. Wide gate-source voltage limits for versatile control electronics. Compact physical dimensions fit demanding PCB layouts. This device is ideal for industrial, manufacturing, renewable energy, power electronics, and HVAC systems requiring durable, efficient switching elements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23 amperes.
This MOSFET supports a maximum drain-source voltage of 600 volts.
It comes in a TO-3PN 3-pin through-hole package, ensuring secure mounting.
The maximum power dissipation capacity of this unit is 310 watts.
The typical gate charge is 110 nanocoulombs, which helps minimize switching losses.
It operates within a temperature range of -55°C to 150°C.
The maximum gate-source voltage range is from -30 to +30 volts.
The maximum drain-source resistance is 240 milliohms, which reduces power loss.
The dimensions are 15.8mm in length, 5mm in width, and 18.9mm in height.
This model features an N-channel configuration.
The country of origin for this MOSFET is India.
It is suitable for power supplies, DC-DC converters, and power factor correction circuits.
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