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DiodesZetex P-Channel MOSFET 3-Pin SOT-23, 1.6 A, 30 V Enhancement ZXMP3A13FTA
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZXMP3A13FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 210mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 806mW |
| Typical Gate Charge Qg @ Vgs | 6.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.95V |
Key Features
- Designed for surface mount applications with a small footprint.
- Features enhancement channel mode for efficient switching.
- Maximum drain-source resistance of 210 milliohms ensures low conduction losses.
- Wide operating temperature range from -55°C to 150°C supports various environments.
- Maximum power dissipation is 806 mW for reliable performance.
- Typical gate charge of 6.4 nanocoulombs allows fast switching speeds.
- Complies with AEC-Q101 automotive standard for reliability.
- Compact dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height.
Product Description
DiodesZetex ZXMP3A13FTA is a type P-Channel MOSFET designed for surface mount electronics applications requiring compact, efficient power switching components. This device supports a maximum continuous drain current of 1.6 A and a maximum drain-source voltage of 30 V, making it suitable for low-voltage power management and driver circuits.
Featuring an enhancement mode channel type, this MOSFET is optimized for fast switching with a typical gate charge of 6.4 nC at the gate-source voltage, improving efficiency in switching regulators and motor control applications. The low maximum drain-source resistance of 210 milliohms contributes to reduced power loss and improved thermal performance.
The device is housed in a 3-pin SOT-23 package, ideal for surface mounting onto PCBs, with compact dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height, enabling high-density electronic assemblies. Operating temperature ranges from -55°C up to 150°C allow deployment in automotive and industrial environments, supported further by meeting the AEC-Q101 automotive standard.
This MOSFET has a maximum power dissipation rating of 806 mW suitable for moderate power levels, with maximum gate-source voltage ratings of ±20 V, ensuring robust gate protection. Its forward voltage is -0.95 V, typical for P-Channel MOSFETs in similar classes.
Applications include automotive electronics, power supplies, DC-DC converters, and general-purpose switching in industrial and consumer electronic circuits. The product's compact size, reliable switching characteristics, and automotive qualification make it an excellent choice for engineers designing efficient, small form factor power management solutions.
Designed for surface mount electronics with compact size and efficient power switching. Compliance with automotive AEC-Q101 standard ensures reliability in demanding applications. Wide temperature range meets industrial and automotive environmental requirements.
Low drain-source resistance reduces conduction losses and improves efficiency. Enhancement mode operation enables fast switching suitable for DC-DC converters and motor control. Small SOT-23 package allows for high-density PCB layouts.
Robust gate voltage ratings protect device integrity in varied environments. Typical gate charge suitable for high-speed switching applications. Discover the full range of MOSFET components at EnvMart for your professional electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.6 A.
It has a maximum drain-source voltage rating of 30 V.
The dimensions of the SOT-23 package are 3.05 mm in length, 1.4 mm in width, and 1 mm in height.
The typical gate charge at the gate-source voltage is 6.4 nanocoulombs (nC).
This model has a maximum power dissipation rating of 806 mW.
The operating temperature range is from -55°C to 150°C.
It complies with the AEC-Q101 automotive standard.
The maximum drain-source resistance is 210 milliohms (mΩ).
This MOSFET features an enhancement mode channel type.
The maximum gate-source voltage rating is ±20 V.
It is suitable for applications including automotive electronics, power supplies, DC-DC converters, and general-purpose switching.
The forward voltage is -0.95 V, typical for P-Channel MOSFETs in similar classes.
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