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DiodesZetex N-Channel MOSFET 600 mA 60 V Enhancement Mode 3-Pin E-Line ZVN4206ASTZ

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 4.01mm
Length 4.77mm
Model ZVN4206ASTZ
Width 2.41mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type E-Line
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 600mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 1Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 700mW
Typical Gate Charge Qg @ Vgs 4nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -4V
DiodesZetex N-Channel MOSFET, 600 mA, 60 V Enhancement, 3-Pin E-LineBrand DiodesZetex

Key Features

  • Supports a maximum continuous drain current of 600 mA for reliable operation.
  • Maximum drain-source voltage of 60 volts ensuring robust switching capabilities.
  • Enhancement mode channel type designed for efficient electronic switching applications.
  • Compact 3-pin E-Line package suitable for through-hole mounting on PCBs.
  • Maximum power dissipation of 700 mW for moderate power applications.
  • Capable of operating in temperature range from -55°C to 150°C for versatile environments.
  • Typical gate charge of 4 nC at gate-source voltage ensures fast switching performance.
  • Meets automotive standards AEC-Q100, AEC-Q200, and AEC-Q101 for quality assurance.

Product Description

DiodesZetex ZVN4206ASTZ N-Channel MOSFET is a semiconductor device engineered for electronic switching and amplification circuits. It supports a maximum continuous drain current of 600 mA and a maximum drain-source voltage of 60 volts in enhancement mode. Housed in a 3-pin E-Line package, this MOSFET is designed for through-hole mounting configurations.

This device efficiently handles power dissipation up to 700 mW and operates within a wide temperature range from -55°C to 150°C, making it suitable for diverse industrial and automotive applications. The typical gate charge of 4 nC at specified gate voltages allows rapid switching, enhancing performance in power management circuits.

The product complies with important automotive standards including AEC-Q100, AEC-Q200, and AEC-Q101, reflecting its high reliability and quality. Its compact dimensions (4.77 mm length, 2.41 mm width, and 4.01 mm height) allow integration into space-constrained circuit boards.

Common applications include power supply design, motor control, amplifier circuits, and other electronic equipment requiring efficient semiconductor switching components. Supports a maximum continuous drain current of 600 mA for reliable operation.

Maximum drain-source voltage of 60 volts ensuring robust switching capabilities. Enhancement mode channel type designed for efficient electronic switching applications. Compact 3-pin E-Line package suitable for through-hole mounting on PCBs.

Maximum power dissipation of 700 mW for moderate power applications. Capable of operating in temperature range from -55°C to 150°C for versatile environments. Typical gate charge of 4 nC at gate-source voltage ensures fast switching performance.

Meets automotive standards AEC-Q100, AEC-Q200, and AEC-Q101 for quality assurance. Dimensions measure 4.77 mm length, 2.41 mm width, and 4.01 mm height for space-efficient design. Explore more high-quality MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart to meet your industrial and electronic design requirements.

DiodesZetex N-Channel MOSFET 600 mA 60 V Enhancement Mode 3-Pin E-Line ZVN4206ASTZ
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Frequently Asked Questions

The maximum continuous drain current for this model is 600 mA, ensuring reliable operation in various applications.

This MOSFET supports a maximum drain-source voltage of 60 volts, which allows for robust switching capabilities.

The typical gate charge for this model is 4 nC at the specified gate-source voltage, facilitating fast switching performance.

The dimensions of this model are 4.77 mm in length, 2.41 mm in width, and 4.01 mm in height, making it suitable for space-constrained designs.

It has a maximum power dissipation of 700 mW, suitable for moderate power applications.

This model operates within a temperature range of -55°C to 150°C, allowing for versatility in various environments.

It is housed in a compact 3-pin E-Line package, designed for through-hole mounting on PCBs.

This device complies with automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, ensuring quality assurance for automotive applications.

The channel type of this model is N-channel, designed for enhancement mode operation.

The maximum gate-source voltage for this MOSFET is -20V to +20V, providing flexibility in circuit design.

The forward voltage for this MOSFET is -4V, which is relevant for specific circuit configurations.

This model is suitable for through-hole mounting, making it easy to integrate into various PCB designs.

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