Vishay IRF820 N-Channel Power MOSFET, 2.5 A, 500 V Enhancement, TO-220AB Package IRF820PBF

Vishay IRF820PBF is a high-voltage N-Channel Power MOSFET with a maximum continuous drain current of 2.5 A and rated for a drain-source voltage up to 500 V. Packaged in a TO-220AB through-hole format with three pins, it is engineered for efficient power switching and amplification in power conversion and control circuits.

This enhancement mode MOSFET features a low maximum RDS(on) of 3 ohms and typical gate charge of 24 nC, enabling effective conduction and switching capabilities. It supports sustained power dissipation of up to 50 W and operates in a wide temperature range from -55°C to 150°C, making it suitable for diverse industrial, laboratory, and hobbyist applications.

The device's 1.6 V forward voltage is critical for thermal and efficiency design considerations. Gate-source voltage must be limited to ±20 V to prevent gate oxidation damage. Despite its robust ratings, it is not qualified to automotive standards but excels in use cases such as SMPS primary-side switching, high-voltage lamp and heater controllers, and discrete motor-drive front-ends for low-current motors.

Its through-hole mounting configuration allows straightforward PCB installation and heatsinking. The IRF820PBF meets RoHS compliance mandates, assuring environmental safety standards are met.

This MOSFET uses an enhancement mode channel suitable for power switching applications. The TO-220AB through-hole package supports easy PCB mounting and effective heat dissipation. Maximum drain-source resistance of 3 ohms reduces conduction losses under typical load.

Typical gate charge of 24 nC allows reasonable switching speed control. Operates safely within a temperature range of -55°C to 150°C. Maximum power dissipation rating of 50 W enables handling of sustained power loads. Forward voltage drop of 1.6 V should be considered for efficiency calculations.

Gate-source voltage limits of ±20 V must be observed to avoid damage. RoHS compliant and suitable for various electronic control and power conversion circuits. Not designed for automotive-standard qualifications but fits laboratory and industrial use.

The IRF820PBF N-Channel Power MOSFET is ideal for industrial electronics, laboratory test equipment, SMPS applications, and hobbyist high-voltage projects where rugged through-hole components are required. It is well-suited for manufacturing environments requiring reliable power semiconductor components.

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