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Vishay N-Channel Power MOSFET 3.7A 400V Enhancement Mode, 3-Pin TO-220 IRFI730GPBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.8mm
Length 10.3mm
Model IRFI730GPBF
Width 4.8mm
Mount Type Through Hole
Series IRFI730G
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 3.7A
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 1Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 35W
Typical Gate Charge Qg @ Vgs 38nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.6V
N-isolated MOSFET,IRFI730G 3.7A 400VBrand Vishay

Key Features

  • This enhancement mode MOSFET features a TO-220 package with 3 pins suitable for through-hole mounting.
  • It delivers a maximum power dissipation of 35 W, enabling effective thermal performance.
  • The device has a maximum drain-source resistance of 1 Ω for efficient conduction.
  • Operating temperature range spans from -55°C to 150°C for demanding environments.
  • Typical gate charge of 38 nC allows predictable switching behavior.
  • Maximum gate-source voltage is ±20 V, supporting standard gate drive voltages.
  • Forward voltage drop is rated at 1.6 V to reduce power loss during conduction.
  • Designed for industrial power supplies and motor control applications requiring moderate current handling.

Product Description

Vishay IRFI730GPBF is a high-voltage N-channel power MOSFET optimized for switching applications requiring a continuous drain current of 3.7 A and a drain-source voltage rating of 400 V. Packaged in a compact TO-220 form factor with 3 pins, it supports through-hole mounting and facilitates efficient heatsinking and thermal management, making it suitable for industrial and electronic power control circuits.

This enhancement mode device offers a maximum power dissipation capability of 35 W, enabling reliable operation under sustained power loads. The maximum drain-source resistance of 1 Ω reduces conduction losses, improving device efficiency in switching operations. With a typical gate charge of 38 nC, the transistor provides predictable switching performance, crucial for timing-sensitive applications.

The MOSFET operates over a wide temperature range from -55°C to 150°C, ensuring stable performance in harsh environments such as industrial power supplies, motor drives, and LED driver stages. The ±20 V gate-source voltage rating accommodates standard gate drive signals while protecting against voltage extremes.

Applications include switching stages for industrial power supplies, low-power motor controls, inverter front-end switching, and discrete power control modules. The device complies with RoHS directives, promoting environmental sustainability.

The TO-220 package allows for effective thermal dissipation and easy mounting on standard panels, which is critical for high-density power applications. Although not specified for automotive use, it is well-suited for diverse industrial and commercial electronics requiring robust power MOSFET solutions.

This enhancement mode MOSFET features a TO-220 package with 3 pins suitable for through-hole mounting. It delivers a maximum power dissipation of 35 W, enabling effective thermal performance. The device has a maximum drain-source resistance of 1 Ω for efficient conduction.

Operating temperature range spans from -55°C to 150°C for demanding environments. Typical gate charge of 38 nC allows predictable switching behavior. Maximum gate-source voltage is ±20 V, supporting standard gate drive voltages.

Forward voltage drop is rated at 1.6 V to reduce power loss during conduction. Designed for industrial power supplies and motor control applications requiring moderate current handling. It is RoHS compliant, meeting environmental safety standards.

Explore the Vishay range of Power MOSFETs and other semiconductor components for superior performance and reliability in industrial, manufacturing, and commercial electronic applications. Discover solutions tailored for power conversion, motor control, and high-voltage switching needs on EnvMart.

Vishay N-Channel Power MOSFET 3.7A 400V Enhancement Mode, 3-Pin TO-220 IRFI730GPBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.7 A.

This MOSFET has a maximum drain-source voltage rating of 400 V.

It can handle a maximum power dissipation of 35 W.

The operating temperature range spans from -55°C to 150°C.

This model is packaged in a TO-220 form factor suitable for through-hole mounting.

The typical gate charge is 38 nC, allowing for predictable switching behavior.

The maximum gate-source voltage rating is ±20 V.

The forward voltage drop is rated at 1.6 V, which helps to reduce power loss during conduction.

This MOSFET features a 3-pin configuration.

The maximum drain-source resistance is 1 Ω, which improves conduction efficiency.

Yes, this device complies with RoHS directives, promoting environmental sustainability.

It is designed for industrial power supplies and motor control applications requiring moderate current handling.

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