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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.3mm |
| Model | IRFI730GPBF |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | IRFI730G |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.6V |
| N-isolated MOSFET,IRFI730G 3.7A 400VBrand | Vishay |
Vishay IRFI730GPBF is a high-voltage N-channel power MOSFET optimized for switching applications requiring a continuous drain current of 3.7 A and a drain-source voltage rating of 400 V. Packaged in a compact TO-220 form factor with 3 pins, it supports through-hole mounting and facilitates efficient heatsinking and thermal management, making it suitable for industrial and electronic power control circuits.
This enhancement mode device offers a maximum power dissipation capability of 35 W, enabling reliable operation under sustained power loads. The maximum drain-source resistance of 1 Ω reduces conduction losses, improving device efficiency in switching operations. With a typical gate charge of 38 nC, the transistor provides predictable switching performance, crucial for timing-sensitive applications.
The MOSFET operates over a wide temperature range from -55°C to 150°C, ensuring stable performance in harsh environments such as industrial power supplies, motor drives, and LED driver stages. The ±20 V gate-source voltage rating accommodates standard gate drive signals while protecting against voltage extremes.
Applications include switching stages for industrial power supplies, low-power motor controls, inverter front-end switching, and discrete power control modules. The device complies with RoHS directives, promoting environmental sustainability.
The TO-220 package allows for effective thermal dissipation and easy mounting on standard panels, which is critical for high-density power applications. Although not specified for automotive use, it is well-suited for diverse industrial and commercial electronics requiring robust power MOSFET solutions.
This enhancement mode MOSFET features a TO-220 package with 3 pins suitable for through-hole mounting. It delivers a maximum power dissipation of 35 W, enabling effective thermal performance. The device has a maximum drain-source resistance of 1 Ω for efficient conduction.
Operating temperature range spans from -55°C to 150°C for demanding environments. Typical gate charge of 38 nC allows predictable switching behavior. Maximum gate-source voltage is ±20 V, supporting standard gate drive voltages.
Forward voltage drop is rated at 1.6 V to reduce power loss during conduction. Designed for industrial power supplies and motor control applications requiring moderate current handling. It is RoHS compliant, meeting environmental safety standards.
Explore the Vishay range of Power MOSFETs and other semiconductor components for superior performance and reliability in industrial, manufacturing, and commercial electronic applications. Discover solutions tailored for power conversion, motor control, and high-voltage switching needs on EnvMart.
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