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Vishay N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRF740APBF
Width 4.7mm
Mount Type Through Hole
Series IRF740A
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 400V
Maximum Drain Source Resistance Rds 550mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 36nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 2V
N-channel MOSFET,IRF740A 10A 400VBrand Vishay

Key Features

  • This device supports enhancement mode switching for high voltage applications.
  • Maximum power dissipation of 125 W enables reliable operation under high load.
  • Low drain-source resistance of 550 mΩ provides efficient conduction.
  • Typical gate charge of 36 nC allows manageable gate driving for fast switching.
  • Designed to operate between -55°C and 150°C ambient temperature.
  • The TO-220AB package allows easy attachment to heatsinks for thermal management.
  • Maximum gate-source voltage rating of ±30 V protects against overdrive.
  • Forward voltage of 2 V should be considered in conduction loss calculations.

Product Description

Vishay IRF740APBF is a high-voltage N-Channel Power MOSFET engineered for power electronic switching applications. It supports a maximum continuous drain current of 10 A and a maximum drain-source voltage of 400 V, packaged in a through-hole 3-pin TO-220AB format that facilitates reliable mounting and effective heat dissipation.

Built for enhancement mode operation, the device has a typical gate charge of 36 nC enabling efficient gate drive, and a maximum power dissipation capability of 125 W for high-load scenarios. The low drain-source resistance of 550 mΩ ensures minimized conduction losses, enhancing overall efficiency.

Thermal performance is rated from -55 °C to 150 °C, making it suitable for demanding environments with proper cooling solutions. The TO-220AB package allows attachment to heatsinks, contributing to thermal management by providing a low thermal-resistance path for dissipating generated heat.

Protective features include a gate-source voltage limit of ±30 V to prevent overdrive damage and a forward voltage of 2 V which should be accounted for in design calculations, especially in synchronous switching configurations.

Applications for this MOSFET include offline power supplies and converters, motor-drive switching stages, inverter circuits requiring high voltage handling, and industrial switching regulators. The through-hole mounting makes it ideal for prototyping and repair tasks.

This MOSFET excels in industrial, manufacturing, and HVAC systems requiring reliable high-voltage switching. It is compliant with RoHS standards ensuring environmentally responsible manufacturing. The product's robust design and thermal tolerance lend well to commercial and laboratory power electronics projects.

Choose Vishay IRF740APBF for efficient, high-performance Power MOSFET applications in diverse industrial and electrical domains. Explore more power semiconductors and MOSFETs in this category on EnvMart.

Vishay N-Channel Power MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220AB IRF740APBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

It has a maximum drain-source voltage rating of 400 V.

The IRF740APBF is packaged in a TO-220AB format, which allows for easy mounting and effective heat dissipation.

The typical gate charge for the IRF740APBF is 36 nC, which facilitates efficient gate driving for fast switching.

This device supports a maximum power dissipation of 125 W, making it suitable for high-load applications.

The operating temperature range for the IRF740APBF is from -55°C to 150°C.

It has a low drain-source resistance of 550 mΩ, which helps minimize conduction losses.

The maximum gate-source voltage rating for this MOSFET is ±30 V, which protects against overdrive.

The forward voltage to consider in conduction loss calculations is 2 V.

The IRF740APBF has a pin count of 3.

Yes, the IRF740APBF is compliant with RoHS standards, ensuring environmentally responsible manufacturing.

This MOSFET is suitable for applications such as offline power supplies, motor-drive switching stages, and industrial switching regulators.

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