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Vishay High-Voltage N-Channel Power MOSFET 600 V, 9.2 A Continuous Drain Current, 170 W Pd, TO-220AB Package IRFB9N60APBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 9.01mm
Length 10.41mm
Model IRFB9N60APBF
Width 4.7mm
Mount Type Through Hole
Series IRFB9N60A
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 9.2A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 750mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 170W
Typical Gate Charge Qg @ Vgs 49nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.5V

Key Features

  • High voltage capability of 600 V suitable for demanding switching tasks.
  • Continuous drain current of 9.2 A supports moderate load currents in power circuits.
  • Low on-resistance of 750 milliohms reduces conduction losses.
  • Maximum power dissipation of 170 watts ensures effective handling of high power loads.
  • Enhancement mode device featuring typical gate charge of 49 nC for controlled switching speeds.
  • TO-220AB through-hole package allows secure mounting and improved heat dissipation.
  • Wide operating temperature range from -55°C to 150°C for harsh environments.
  • Gate-to-source voltage tolerance from -30 V to +30 V suitable for standard gate drives.

Product Description

Vishay IRFB9N60APBF is a high-voltage N-channel Power MOSFET designed for industrial electronic circuits requiring robust switching and amplification capabilities. This device features a 600 V maximum drain-source voltage and supports a continuous drain current of 9.2 A, making it ideal for moderate power levels in industrial applications.

Manufactured in a TO-220AB through-hole package, the MOSFET facilitates easy mounting on heatsinks to manage thermal dissipation efficiently. With a low on-resistance of 750 milliohms, it minimizes conduction losses, thereby enhancing overall circuit efficiency. The device operates in enhancement mode and features a typical gate charge of 49 nanocoulombs, which allows precise control over switching speed and driver current requirements.

The IRFB9N60APBF is specified to operate in a wide temperature range from -55°C to 150°C, thus enabling reliable performance under extreme thermal conditions common in industrial environments. It tolerates gate-to-source voltages ranging from -30 V to +30 V, compatible with standard gate drive voltages.

Applications include offline power supplies, switch mode power supply (SMPS) stages, inverters, motor drives, high-voltage DC-DC converters, and inductive load switching in industrial systems. The device is suitable for prototype development and through-hole board designs but is not characterized for automotive applications.

High voltage capability of 600 V suitable for demanding switching tasks. Continuous drain current of 9.2 A supports moderate load currents in power circuits. Low on-resistance of 750 milliohms reduces conduction losses. Maximum power dissipation of 170 watts ensures effective handling of high power loads.

Enhancement mode device featuring typical gate charge of 49 nC for controlled switching speeds. TO-220AB through-hole package allows secure mounting and improved heat dissipation. Wide operating temperature range from -55°C to 150°C for harsh environments.

Gate-to-source voltage tolerance from -30 V to +30 V suitable for standard gate drives. Not suitable for automotive-grade applications, intended for industrial electronics. Explore our wide range of power semiconductor devices and components to enhance your industrial and electronic designs at EnvMart.

Vishay High-Voltage N-Channel Power MOSFET 600 V, 9.2 A Continuous Drain Current, 170 W Pd, TO-220AB Package IRFB9N60APBF
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Frequently Asked Questions

The maximum drain-source voltage for this model is 600 V, making it suitable for demanding switching tasks.

This unit supports a continuous drain current of 9.2 A, which is adequate for moderate load currents in power circuits.

The maximum power dissipation for this MOSFET is 170 watts, ensuring effective handling of high power loads.

It features a low on-resistance of 750 milliohms, which helps to reduce conduction losses in circuits.

The typical gate charge for this model is 49 nanocoulombs, allowing for controlled switching speeds.

This MOSFET operates within a wide temperature range from -55°C to 150°C, suitable for harsh environments.

The device is housed in a TO-220AB through-hole package, which facilitates secure mounting and improved heat dissipation.

It tolerates gate-to-source voltages ranging from -30 V to +30 V, making it compatible with standard gate drive voltages.

This model is suitable for applications such as offline power supplies, switch mode power supply stages, inverters, and motor drives.

This device has a pin count of 3, which is standard for its package type.

The dimensions of this model are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.

No, this model is not characterized for automotive applications; it is intended for industrial electronics.

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