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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFB9N60APBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFB9N60A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.2A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Vishay IRFB9N60APBF is a high-voltage N-channel Power MOSFET designed for industrial electronic circuits requiring robust switching and amplification capabilities. This device features a 600 V maximum drain-source voltage and supports a continuous drain current of 9.2 A, making it ideal for moderate power levels in industrial applications.
Manufactured in a TO-220AB through-hole package, the MOSFET facilitates easy mounting on heatsinks to manage thermal dissipation efficiently. With a low on-resistance of 750 milliohms, it minimizes conduction losses, thereby enhancing overall circuit efficiency. The device operates in enhancement mode and features a typical gate charge of 49 nanocoulombs, which allows precise control over switching speed and driver current requirements.
The IRFB9N60APBF is specified to operate in a wide temperature range from -55°C to 150°C, thus enabling reliable performance under extreme thermal conditions common in industrial environments. It tolerates gate-to-source voltages ranging from -30 V to +30 V, compatible with standard gate drive voltages.
Applications include offline power supplies, switch mode power supply (SMPS) stages, inverters, motor drives, high-voltage DC-DC converters, and inductive load switching in industrial systems. The device is suitable for prototype development and through-hole board designs but is not characterized for automotive applications.
High voltage capability of 600 V suitable for demanding switching tasks. Continuous drain current of 9.2 A supports moderate load currents in power circuits. Low on-resistance of 750 milliohms reduces conduction losses. Maximum power dissipation of 170 watts ensures effective handling of high power loads.
Enhancement mode device featuring typical gate charge of 49 nC for controlled switching speeds. TO-220AB through-hole package allows secure mounting and improved heat dissipation. Wide operating temperature range from -55°C to 150°C for harsh environments.
Gate-to-source voltage tolerance from -30 V to +30 V suitable for standard gate drives. Not suitable for automotive-grade applications, intended for industrial electronics. Explore our wide range of power semiconductor devices and components to enhance your industrial and electronic designs at EnvMart.
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