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Vishay N-Channel Power MOSFET 410 A 30 V Depletion Mode 4-Pin PowerPAK SO-8L SQJ170ELP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJ170ELP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.02Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Depletion mode N-Channel MOSFET suitable for automotive and industrial applications.
- Maximum power dissipation rated at 255 W for robust performance.
- Typical gate charge of 43 nC at Vgs supports efficient switching.
- High maximum operating temperature of 125°C and minimum operating temperature down to -55°C.
- Low maximum drain-source resistance of 0.02 Ω enhances conductivity and reduces losses.
- Compact dimensions with length 6.15 mm and width 4.9 mm for space-constrained designs.
- Surface mounted, ensuring ease of assembly on PCBs.
- Forward voltage of 1.1 V and maximum gate-source voltage of 20 V for reliable control.
Product Description
The Vishay SQJ170ELP-T1_GE3 is a robust N-Channel power MOSFET designed for demanding automotive and industrial applications. Featuring a depletion mode channel, this MOSFET is capable of handling a maximum continuous drain current of 410 A and operates safely up to a drain-source voltage of 30 V.
Packaged in a compact 4-pin PowerPAK SO-8L surface mount package, it offers excellent thermal and electrical performance, with a maximum power dissipation rating of 255 W. It also supports high-frequency switching with a typical gate charge of 43 nC at Vgs, contributing to better efficiency in power electronics circuits.
The device is specified for wide temperature ranges, operating reliably from -55°C to 125°C, making it suitable for harsh environments often found in automotive electronics. Its low maximum drain-source resistance of 0.02 Ω ensures minimal conduction losses, improving system efficiency.
Additional features include a forward voltage drop of 1.1 V and a maximum gate-source voltage rating of 20 V for secure switching control. The compact size, with a length of 6.15 mm and width of 4.9 mm, supports design flexibility in space-restricted applications.
The MOSFET is AEC-Q101 qualified, ensuring compliance with automotive reliability standards and making it ideal for automotive power management, industrial motor control, power supplies, and other high power density applications.
Depletion mode N-Channel MOSFET for high power density uses. High continuous drain current of 410 A and drain-source voltage of 30 V. AEC-Q101 automotive standard qualification guarantees reliability. Compact PowerPAK SO-8L surface mount package optimizes space usage.
Wide operating temperature range from -55°C to 125°C. Low on-resistance of 0.02 Ω for efficient conduction. Typical gate charge of 43 nC facilitates fast switching. Maximum power dissipation of 255 W supports heavy-duty applications.
Forward voltage of 1.1 V and maximum gate-source voltage of 20 V enhance control. Explore more Power MOSFETs and discrete semiconductors to meet your automotive and industrial electronic design needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 410 A.
It can handle a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 255 W.
The typical gate charge is 43 nC at Vgs.
This model has a length of 6.15 mm and a width of 4.9 mm.
The maximum operating temperature is 125°C.
The minimum operating temperature is -55°C.
It is packaged in a PowerPAK SO-8L surface mount package.
The maximum gate-source voltage rating is 20 V.
It is AEC-Q101 qualified, ensuring compliance with automotive reliability standards.
The maximum drain-source resistance is 0.02 Ω.
This model features a depletion mode N-channel.
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