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Vishay N-Channel Power MOSFET 10A, 400V Enhancement Mode, TO-220AB Package IRF740PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRF740PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRF740 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 400V |
| Maximum Drain Source Resistance Rds | 550mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 63nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 2V |
| N-channel MOSFET,IRF740 10A 400V 50pcsBrand | Vishay |
Key Features
- The device supports 10A maximum continuous drain current for substantial load handling.
- It features a 400V maximum drain-source voltage suitable for high-voltage switching.
- TO-220AB package allows through-hole mounting with easy heat dissipation.
- Maximum power dissipation of 125W enables sustained thermal handling.
- Low on-resistance of 550mΩ reduces conduction losses.
- Typical gate charge is 63nC, minimizing gate-drive energy requirements.
- Operates within a temperature range of -55°C to 150°C for versatile operating environments.
- Single N-channel enhancement-mode transistor with 3 pin configuration.
Product Description
Vishay IRF740PBF is an N-Channel Power MOSFET designed for high-voltage and high-current switching applications in power electronics. This device is housed in a TO-220AB through-hole package, facilitating standard heat-sinking and mounting methods. It supports a continuous drain current of 10A and withstands a maximum drain-source voltage of 400V, making it ideal for industrial and commercial power switching tasks.
The MOSFET features an enhancement-mode channel with a maximum on-resistance of 550mΩ, providing predictable conduction losses and efficient power handling. It dissipates up to 125W of power, suitable for demanding thermal environments. The typical gate charge of 63nC reduces energy required for switching, which benefits fast-switching and efficient gate drive designs.
With operating temperatures ranging from -55°C to 150°C, the IRF740PBF adapts to harsh environments often found in industrial motor drives, inverter circuits, and switch-mode power supplies. The device allows a maximum gate-source voltage of ±20V, ensuring proper control and protection of the gate terminal.
This 3-pin transistor supports conventional through-hole mounting and is RoHS compliant for environmental safety. Applications include switch-mode power supply output stages, high-voltage DC-DC converters, motor drives, and power electronic inverter circuits.
The device supports 10A maximum continuous drain current for substantial load handling. It features a 400V maximum drain-source voltage suitable for high-voltage switching. TO-220AB package allows through-hole mounting with easy heat dissipation.
Maximum power dissipation of 125W enables sustained thermal handling. Low on-resistance of 550mΩ reduces conduction losses. Typical gate charge is 63nC, minimizing gate-drive energy requirements. Operates within a temperature range of -55°C to 150°C for versatile operating environments.
Single N-channel enhancement-mode transistor with 3 pin configuration. Maximum gate-source voltage rating is ±20V ensuring safe gate drive operations.
This Power MOSFET is suitable for industrial, manufacturing, HVAC, and electronic laboratory use cases where reliable high-voltage switching is needed. Explore more Vishay power semiconductors on EnvMart for enhanced design solutions.
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Frequently Asked Questions
The IRF740PBF supports a maximum continuous drain current of 10A.
It features a maximum drain-source voltage of 400V, making it suitable for high-voltage applications.
This model is housed in a TO-220AB package, which allows for through-hole mounting and effective heat dissipation.
The device can dissipate up to 125W of power, suitable for demanding thermal environments.
The typical gate charge is 63nC, which helps minimize the energy required for switching.
It operates within a temperature range of -55°C to 150°C, allowing it to function in various environments.
The maximum gate-source voltage rating is ±20V, ensuring safe operation of the gate terminal.
The maximum on-resistance is 550mΩ, which reduces conduction losses during operation.
This model features a 3-pin configuration, typical for N-channel MOSFETs.
The device is RoHS compliant, ensuring it meets environmental safety standards.
It is suitable for applications such as switch-mode power supplies, high-voltage DC-DC converters, and motor drives.
The forward voltage is specified at 2V, which is relevant for its operation in circuits.
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