Infineon CoolMOS P7 N-Channel MOSFET 6 A 800 V Enhancement 3-Pin TO-220 IPP80R900P7XKSA1

Infineon IPP80R900P7XKSA1 is a high-performance CoolMOS P7 N-Channel Enhancement Mode MOSFET featuring a maximum continuous drain current of 6 A and drain-source voltage up to 800 V. Encapsulated in a reliable 3-pin TO-220 package controlled by through-hole mount, this MOSFET is engineered to deliver superior efficiency and thermal performance for demanding applications.

This device is optimized primarily for flyback converter applications such as power adapters, battery chargers, LED drivers, and audio switched-mode power supplies (SMPS). It achieves up to 0.6% efficiency improvements and significantly lowers MOSFET temperatures by 2 to 8°C compared to previous generation devices and competing parts, which enables enhanced power density and reliability.

The MOSFET demonstrates a best-in-class figure of merit (FOM) combining the on-resistance (RDS(on)) of 900 milliohms and total switching energy (Eoss). The typical gate charge Qg is minimized at 15 nC to reduce switching losses, supporting higher switching frequencies and improved system efficiency.

Additional features include an integrated Zener diode providing ESD protection up to Human Body Model (HBM) Class 2 standards, ensuring robustness against transient voltage spikes. The device operates safely over a broad temperature range from -55°C to 150°C with a maximum power dissipation rating of 45 W, suitable for industrial, commercial, and power management applications.

The physical dimensions of the MOSFET are 29.95 mm height, 10.36 mm length, and 4.57 mm width, making it compatible with standard TO-220 footprints for easy PCB integration. This compact form factor combined with excellent electrical characteristics facilitates efficient design and simplifies assembly.

Optimized for flyback converters, LED drivers, and industrial power supplies. Targets BOM cost savings and reduction in assembly complexity. Lower switching losses enhance device longevity and thermal management. Integrated ESD protection ensures high reliability in harsh environments.

Suitable for high density PCB layouts with standard TO-220 package.

This Infineon CoolMOS P7 MOSFET is ideal for engineers and designers seeking efficient power switching components that deliver performance enhancement and design flexibility in electronic and industrial applications.

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