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Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 950 V Enhancement, 3-Pin TO-252 IPD95R2K0P7ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.41mm |
| Length | 6.73mm |
| Model | IPD95R2K0P7ATMA1 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Maximum Drain Source Voltage Vds | 950V |
| Maximum Drain Source Resistance Rds | 2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Supports a maximum continuous drain current of 4 A for reliable moderate load performance.
- Maximum drain-source voltage of 950 V enables operation in high-voltage circuits.
- Employs enhancement mode with N-channel conduction and low 2 mΩ Rds(on) for minimal power loss.
- Compact TO-252 surface-mount package with 3 pins suitable for PCB assembly.
- Maximum power dissipation of 37 W offers significant thermal handling capacity.
- Wide operating temperature range from -55°C to 150°C for various industrial environments.
- Low typical gate charge of 10 nC reduces switching loss and drive energy consumption.
- Maximum gate-source voltage rating of 20 V supports standard gate drive voltages.
Product Description
Infineon IPD95R2K0P7ATMA1 CoolMOS P7 N-Channel MOSFET is a high-voltage enhancement mode transistor optimized for switching and power conversion in electronic systems. It operates with a maximum continuous drain current of 4 A and a drain-source voltage up to 950 V, making it suitable for demanding power supply and converter applications.
This device is housed in a 3-pin TO-252 surface-mount package, facilitating easy and compact PCB mounting. The low drain-source resistance of 2 mΩ minimizes conduction losses, enhancing overall efficiency.
The transistor features a low typical gate charge of 10 nC, reducing energy loss during switching events and supporting efficient operation. It can withstand gate-source voltages up to 20 V and has a maximum power dissipation rating of 37 W, providing substantial thermal headroom for robust use.
Operating temperature ranges from -55°C to 150°C, allowing it to perform reliably across harsh industrial and environmental conditions. The typical forward voltage of 0.9 V ensures efficient conduction during operation.
Key features include surface mounting design in a TO-252 package, which is common in power modules and industrial circuits, making it ideal for high-voltage power supplies, switch-mode power supply primary switches, and renewable energy converters.
Supports 4 A continuous drain current and 950 V drain-source voltage rating. Compact TO-252 3-pin surface mount package ideal for PCB integration. Low Rds(on) of 2 milliohms reduces conduction losses and improves efficiency.
Wide ambient operating temperature from -55 to 150 degrees Celsius. Low gate charge of 10 nC minimizes switching losses for energy-efficient operation. High maximum power dissipation of 37 W ensures thermal reliability. Gate-source voltage maximum of 20 V for standard drive compatibility.
Applications in high-voltage power supplies, motor drives, and renewable energy systems.
This MOSFET is an excellent component choice for industrial, electronic manufacturing, renewable energy, and switch-mode power supply sectors, supporting efficient and reliable high-voltage switching.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4 A, making it suitable for moderate load performance.
This MOSFET has a maximum drain-source voltage rating of 950 V, allowing it to operate in high-voltage circuits.
The typical gate charge for this unit is 10 nC, which helps minimize switching losses and drive energy consumption.
It has a maximum power dissipation rating of 37 W, providing significant thermal handling capacity.
This MOSFET is housed in a TO-252 package and features a 3-pin configuration, suitable for surface mounting.
The operating temperature range for this model is from -55°C to 150°C, allowing it to perform reliably in various industrial environments.
The MOSFET features a low drain-source resistance (Rds(on)) of 2 mΩ, which minimizes conduction losses and enhances efficiency.
This model is suitable for applications in high-voltage power supplies, motor drives, and renewable energy systems.
The maximum gate-source voltage rating for this device is 20 V, supporting standard gate drive voltages.
The typical forward voltage for this model is 0.9 V, ensuring efficient conduction during operation.
The dimensions of this model are 2.41 mm in height, 6.73 mm in length, and 6.22 mm in width.
This device is an N-channel MOSFET operating in enhancement mode, optimized for efficient switching and power conversion.
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