Infineon 800V CoolMOS P7 N-Channel MOSFET, 11A Continuous Drain Current, 450mΩ RDS(on), TO-220 IPA80R450P7XKSA1

Infineon IPA80R450P7XKSA1 800V CoolMOS P7 N-Channel MOSFET is a high-voltage switching device engineered for industrial and power conversion applications. Its robust performance is well suited for use in power supplies, motor drives, and switch-mode power systems requiring reliable operation up to 800V and 11A continuous current.

This MOSFET comes in a TO-220 package designed for through-hole mounting, allowing efficient heat dissipation via heatsinks or chassis connections, vital for thermal management at power dissipation levels up to 29W.

The device features a low maximum drain-source on-resistance of 450mΩ, minimizing conduction losses and enhancing energy efficiency. Its typical gate charge of 24nC and a maximum gate-source voltage of 30V allow for versatile gate drive configurations to optimize switching speed and performance.

Operable in temperatures ranging from -55°C to 150°C, this MOSFET fits applications requiring wide ambient conditions, including industrial motor fronts, power supplies, energy conversion, and laboratory prototypes with through-hole assembly needs.

Applications include high-voltage power supply units, industrial motor drive front-ends, energy-efficient switch-mode power supplies, and line-side switching in booster circuits. The MOSFET supports a maximum drain-source voltage of 800V for demanding power applications.

Its TO-220 package enables through-hole mounting and effective heat dissipation. The typical gate charge of 24nC allows for efficient switching performance. Operating temperature range from -55°C to 150°C supports diverse environments.

Maximum power dissipation of 29W ensures robustness under thermal stress. Gate-source voltage tolerance up to 30V provides flexible drive options. Explore the category of discrete semiconductors and MOSFETs at EnvMart for more industrial-grade power electronics components.