Infineon CoolMOS CE N-Channel MOSFET, 8.4 A, 600 V Enhancement Mode, 3-Pin TO-251 IPS60R800CEAKMA1

Infineon IPS60R800CEAKMA1 is a CoolMOS CE N-Channel MOSFET designed for high voltage applications requiring efficient switching and high ruggedness. It supports a maximum continuous drain current of 8.4 A and maximum drain source voltage of 600 V. Housed in a 3-pin TO-251 through-hole package, this MOSFET is ideal for industrial, power management, and electronic component manufacturing.

The device uses Infineon's super junction technology, enabling fast switching speeds and improved conduction efficiency while maintaining ease of use. Its enhancement mode operation ensures compatibility with standard driver circuits for robust performance.

Rated for operation in harsh environments from -40°C to 150°C, the MOSFET has a maximum power dissipation of 74 W and features a maximum drain source resistance of 800 milliohms, contributing to lower power losses.

Key electrical characteristics include a typical gate charge of 17.2 nC at gate-source voltage, a gate-source voltage maximum of 20 V, and a forward voltage drop of 900 mV. These parameters make it suitable for power conversion, motor control, and switching power supplies in various industrial and electronic applications.

Its compact dimensions of 6.73 mm length, 6.22 mm height, and 2.4 mm width enable dense PCB layouts. The through-hole mounting style facilitates secure mechanical and electrical connections.

Features enhancement mode operation for efficient switching performance. Designed with CoolMOS CE technology based on the super junction principle. Has a maximum power dissipation capacity of 74 W for reliable thermal performance.

Compact TO-251 package measures 6.73 mm length, 6.22 mm height, and 2.4 mm width. Operates within a temperature range of -40°C to 150°C for robust industrial use. Maximum drain source resistance of 800 milliohms supports high efficiency.

Typical gate charge of 17.2 nC ensures swift switching response. Maximum gate source voltage rating is 20 V to protect against gate overstress. Forward voltage drop of 900 mV contributes to low conduction losses. Through-hole mount type for easy PCB integration.

This MOSFET is suitable for use in industrial power electronics, laboratory power supplies, HVAC systems, manufacturing equipment, and electronic component design where reliable high voltage switching is necessary.

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