$2.08
$2.02
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon 600V CoolMOS CFD7 N-Channel MOSFET 8A 600V P Channel 3-Pin TO-220 IPA60R170CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.85mm |
| Length | 10.68mm |
| Model | IPA60R170CFD7XKSA1 |
| Width | 16.15mm |
| Mount Type | Through Hole |
| Series | 600V CoolMOS CFD7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 170mΩ |
| Channel Mode | P |
| Maximum Power Dissipation Pd | 26W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET features a TO-220 package with 3 pins for through-hole mounting.
- It has a low maximum drain-source resistance of 170 milliohms ensuring efficient conduction.
- The device supports a maximum power dissipation of 26 watts and a wide operating temperature range from -55 to 150 degrees Celsius.
- Its typical gate charge (Qg) at Vgs is 28 nanocoulombs, supporting faster switching.
- Designed with integrated fast body diode and reduced gate charge for improved turn-off behavior.
- Offers high reliability for resonant topologies with best-in-class hard commutation ruggedness.
- Maximum gate-source voltage is 20 volts and forward voltage is 1 volt.
- Compact dimensions of 10.68 mm length, 16.15 mm width, and 4.85 mm height.
Product Description
Infineon IPA60R170CFD7XKSA1 is a 600V CoolMOS CFD7 series N-Channel MOSFET designed for efficient power switching applications. It supports a maximum continuous drain current of 8 amps and a drain-source voltage rating of 600 volts, making it suitable for medium power electronics and power management circuits.
The TO-220 package with a 3-pin configuration facilitates through-hole mounting and good thermal dissipation with its 26-watt power handling capability. Its low on-resistance of 170 milliohms minimizes conduction losses and enhances energy efficiency.
This MOSFET features integrated fast body diode and reduced gate charge (28nC at Vgs), providing improved turn-off behavior and a reverse recovery charge up to 69% lower compared to competitors. This makes it highly reliable in resonant topologies and applications demanding hard commutation ruggedness.
Operating temperature ranges from -55 °C to 150 °C, allowing use in diverse industrial environments. The maximum gate-source voltage rating is 20 volts and forward voltage is 1 volt, typical for these power MOSFETs.
Compact dimensions (length 10.68 mm, width 16.15 mm, height 4.85 mm) aid in space-constrained designs while maintaining robust performance.
This component finds use in power supplies, industrial motor drivers, power inverters, and general electronic component applications in industrial, commercial, and manufacturing sectors.
This MOSFET features a TO-220 package with 3 pins for through-hole mounting. It has a low maximum drain-source resistance of 170 milliohms ensuring efficient conduction. The device supports a maximum power dissipation of 26 watts and a wide operating temperature range from -55 to 150 degrees Celsius.
Its typical gate charge (Qg) at Vgs is 28 nanocoulombs, supporting faster switching. Designed with integrated fast body diode and reduced gate charge for improved turn-off behavior. Offers high reliability for resonant topologies with best-in-class hard commutation ruggedness.
Maximum gate-source voltage is 20 volts and forward voltage is 1 volt. Compact dimensions of 10.68 mm length, 16.15 mm width, and 4.85 mm height. Explore a wide range of semiconductor components and MOSFETs on EnvMart to find the best solution for your electrical and industrial power management needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 8 amps.
This MOSFET has a maximum drain-source voltage rating of 600 volts.
It comes in a TO-220 package type, which features a 3-pin configuration for through-hole mounting.
The maximum power dissipation supported by this unit is 26 watts.
The typical gate charge (Qg) at Vgs for this MOSFET is 28 nanocoulombs.
It operates within a temperature range of -55 °C to 150 °C.
The maximum gate-source voltage rating for this model is 20 volts.
The dimensions are 10.68 mm in length, 16.15 mm in width, and 4.85 mm in height.
This MOSFET features a maximum drain-source resistance of 170 milliohms.
It is suitable for power supplies, industrial motor drivers, and power inverters, among other power management applications.
This model has an N-channel configuration.
The forward voltage for this unit is 1 volt.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$19.84
$19.24
-3%
New
Recently Viewed Products
$2.08
$2.02
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent