DiodesZetex Dual 2 Type P-Channel Enhancement MOSFET, 2.8 A, 30 V, 6-Pin TSOT DMP3164LVT-7

DiodesZetex DMP3164LVT-7 is a dual P-channel enhancement mode MOSFET tailored for high-efficiency power management and switching applications. This device features a maximum continuous drain current of 2.8 A and a drain-source voltage rating of 30 V, making it suitable for surface-mount electronic circuits where space and thermal performance are critical.

The MOSFET is housed in a compact 6-pin TSOT package with dimensions of 2.9 mm length, 2.8 mm width, and 1 mm height. It supports an enhancement channel mode, with a maximum gate-source voltage of 12 V and typical gate charge of 4.4 nC, ensuring fast switching performance and low input capacitance.

Designed for demanding industrial and electronic applications, this component can operate reliably over a wide temperature range from -55°C to 150°C. The device complies with various international standards such as MIL-STD-202, J-STD-020, UL 94V-0 flame rating, AEC-Q101 automotive qualification, and RoHS directives.

Key electrical characteristics include a low maximum drain-source resistance of 0.3 ohms, power dissipation capability of 1.16 W, and a forward voltage of -0.8 V. The device integrates two elements per chip in a dual transistor configuration without automotive-specific standards.

This dual P-channel MOSFET is ideal for use in industrial, manufacturing, power management, and electronic instrumentation sectors that require reliable and compact semiconductor switching components.

Features low on-state resistance for energy efficiency. Dual transistor configuration with 6-pin TSOT package. Maximum continuous drain current of 2.8 amperes. Supports maximum drain-source voltage of 30 volts. High temperature operation from -55°C up to 150°C.

Typical gate charge of 4.4 nC at Vgs. Enhancement mode device with gate-source voltage up to 12 volts. Compact dimensions: 2.9 mm length, 2.8 mm width, 1 mm height. Compliance with standards including RoHS, MIL-STD-202, and AEC-Q101.

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