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DiodesZetex N-Channel Enhancement MOSFET, 11.9 A, 60 V, 8-Pin SOIC Surface Mount DMT6016LSS-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMT6016LSS-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | DMT6016LSS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
Key Features
- Features a surface mount SOIC package with 8 pins for efficient PCB integration.
- Maximum power dissipation is rated at 2.1 W for reliable thermal management.
- Low maximum drain-source resistance of 28 mΩ enhances conduction efficiency.
- Operational temperature range from -55°C to 150°C supports diverse industrial environments.
- Typical gate charge of 17 nC at rated gate-source voltage enables fast switching.
- Maximum gate-source voltage tolerance of -20 V to +20 V ensures robust gate drive protection.
- Compact dimensions with 4.95 mm length, 3.95 mm width, and 1.5 mm height allow space-saving designs.
Product Description
DiodesZetex DMT6016LSS-13 N-Channel Enhancement MOSFET is designed for high-performance switching applications requiring up to 11.9 A continuous drain current and 60 V maximum drain-source voltage. It employs an 8-pin SOIC surface mount package, facilitating compact, high-density electronic circuit assembly.
This MOSFET provides a low static drain-source resistance of 28 milliohms, contributing to improved energy efficiency and reduced heat generation during operation. It features a maximum power dissipation rating of 2.1 W, allowing for stable thermal performance in demanding industrial, automotive, and power management applications.
The device is engineered to operate safely within a wide temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions and extended operating life. Its typical gate charge of 17 nanocoulombs ensures rapid switching transition times, which is critical in high-frequency circuits and power conversion systems.
The gate-source voltage is rated for a maximum of -20 V to +20 V, providing enhanced protection margins for gate drive circuitry. Its compact footprint, with 4.95 mm length, 3.95 mm width, and 1.5 mm height, supports integration in space-constrained applications in electronics manufacturing.
Surface mount 8-pin SOIC package enables automated assembly and consistent PCB integration. High drain current capability for power switching in industrial and automotive electronics. Robust thermal and electrical specifications support reliability in power management circuits.
Compact dimensions optimized for modern circuit board layouts. Wide operating temperature range suitable for demanding environments. Low gate charge and resistance contribute to efficient switching and minimal losses.
This MOSFET is commonly utilized in power supply units, motor control circuits, and general-purpose switching tasks within electronic equipment. Its design reliability and performance make it an ideal choice for semiconductor discrete component needs in industrial, commercial, and automotive sectors.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11.9 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
The typical gate charge at the rated gate-source voltage is 17 nC.
The maximum power dissipation is rated at 2.1 W.
It operates within a temperature range from -55°C to 150°C.
The dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
It comes in an 8-pin SOIC surface mount package.
The maximum gate-source voltage tolerance is -20 V to +20 V.
The maximum drain-source resistance is 28 mΩ.
It is commonly utilized in power supply units, motor control circuits, and general-purpose switching tasks.
This model features an N-channel enhancement mode.
The country of origin for this MOSFET is India.
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