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Vishay N-Channel MOSFET PowerPAK 1212-8SH Surface Mount 40 A 30 V Enhancement Mode SiSHA04DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 930μm |
| Length | 3.3mm |
| Model | SISHA04DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | SiSHA04DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8SH |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00215Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 22.5nC |
| Maximum Gate Source Voltage Vgs | -16, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device operates with low maximum drain-source resistance of 0.00215 ohm for high efficiency.
- It supports a maximum power dissipation of 52 W at a maximum operating temperature of 150°C.
- The MOSFET has a typical forward voltage of 1.1 V and a typical gate charge of 22.5 nC at Vgs.
- It features a trenchFET Gen IV structure for enhanced performance in power applications.
- The package dimensions are 3.3 mm length by 3.3 mm width and a height of 930 μm.
- Designed for surface mount applications with an 8-pin layout.
- The device supports a maximum gate-source voltage of -16 V to +20 V and operates down to -55°C minimum temperature.
Product Description
Vishay SiSHA04DN-T1-GE3 is a high-performance N-Channel MOSFET designed for efficient power switching applications. This device features an 8-pin PowerPAK 1212-8SH surface mount package, facilitating compact PCB designs in industrial and electronic circuits.
Rated for a maximum continuous drain current of 40 A and a drain-source voltage of 30 V, it offers robust conduction for high-current loads. The low maximum drain-source resistance of 0.00215 ohm ensures minimal conduction losses and high efficiency in power management applications.
Its trenchFET Gen IV technology delivers enhanced switching performance and reduced gate charge, with a typical forward voltage of 1.1 V and a gate charge of 22.5 nC at Vgs. This contributes to better thermal management and faster switching speeds.
The MOSFET can handle power dissipation up to 52 W and operates reliably in temperatures ranging from -55°C to 150°C, making it suitable for demanding environments in industrial, electronics manufacturing, automotive electronics, and power supply designs.
The compact 3.3x3.3 mm package with a height of 930 μm eases integration on dense PCB layouts and supports surface mount technology assembly processes. The device operates within a gate-source voltage range of -16 V to +20 V, providing flexibility for various drive voltages.
Low maximum Rds(on) of 0.00215 ohm for efficiency. High continuous drain current rating of 40 A. Compact PowerPAK 1212-8SH 8-pin surface mount package. Wide operating temperature range from -55°C to 150°C. TrenchFET Gen IV technology for superior switching.
Maximum power dissipation of 52 W for thermal reliability. Typical gate charge of 22.5 nC enhances switching speed.
This MOSFET is ideal for use in industrial power management, high-current switching circuits, electronic control units, and other applications requiring reliable surface mount power devices. Explore EnvMart's wide selection of power semiconductors for comprehensive industrial and electronic solutions.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 A.
The maximum drain-source voltage is 30 V.
It supports a maximum power dissipation of 52 W.
This model operates in a temperature range from -55°C to 150°C.
The package dimensions are 3.3 mm in length and width, with a height of 930 μm.
The typical gate charge at Vgs is 22.5 nC.
It supports a maximum gate-source voltage of -16 V to +20 V.
This device features an N-channel configuration.
The maximum drain-source resistance is 0.00215 ohm.
The typical forward voltage is 1.1 V.
It is designed for surface mount applications.
It features trenchFET Gen IV technology for improved performance in power applications.
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