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Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement Mode, 6-Pin SOT-363 SSM6N7002KFU

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Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement Mode, 6-Pin SOT-363 SSM6N7002KFU

Name: Toshiba Dual 2 N-Channel MOSFET, 300 mA, 60 V Enhancement Mode, 6-Pin SOT-363 SSM6N7002KFU
Brand: Toshiba
SKU: 318560
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Thailand
Brand	Toshiba
Height	0.9mm
Length	2mm
Model	SSM6N7002KFU
Width	1.25mm
Mount Type	Surface
Package Type	SOT-363
Minimum Operating Temperature	150°C
Pin Count	6
Number of Elements per Chip	2
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	300mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	1.75Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	0.39nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	-0.79V
Transistor Configuration	Dual

Key Features

Dual N-channel MOSFET designed for high-speed switching applications.
Maximum continuous drain current of 300 mA supports moderate load requirements.
Low drain-source on-resistance enhances efficiency in electronic circuits.
Compact 6-pin SOT-363 surface-mount package for PCB integration.
Supports a maximum drain-source voltage of 60 V for protective tolerance.
Operates with a gate-source voltage up to 20 V, suitable for diverse applications.
Typical gate charge of 0.39 nC enables low gate drive losses.
Complies with automotive standard AEC-Q101 for reliability in automotive systems.

Product Description

Toshiba SSM6N7002KFU is a dual 2 N-channel MOSFET designed for high-speed switching applications. This enhancement mode transistor supports a maximum continuous drain current of 300 mA and a drain-source voltage of 60 V, making it suitable for efficient power management in electronic circuits.

Housed in a compact 6-pin SOT-363 surface-mount package, the MOSFET offers low on-resistance RDS(ON) values, improving energy efficiency and reducing heat generation. The device features a gate-source voltage rating of 20 V and a typical gate charge of 0.39 nC, enabling low power loss during switching operations.

Its dual transistor configuration with two elements per chip supports versatile circuit designs. Designed to meet automotive standard AEC-Q101, it ensures reliability in demanding automotive and industrial environments. The operating temperature range extends up to 150°C, providing thermal stability across diverse applications.

The MOSFET is manufactured in Thailand and is ideal for applications in power management, signal switching, and automotive electronic systems. Its surface-mount design facilitates easy PCB integration while maintaining robust electrical characteristics.

Dual N-channel MOSFET designed for high-speed switching applications. Maximum continuous drain current of 300 mA supports moderate load requirements. Low drain-source on-resistance enhances efficiency in electronic circuits.

Compact 6-pin SOT-363 surface-mount package for PCB integration. Supports a maximum drain-source voltage of 60 V for protective tolerance. Operates with a gate-source voltage up to 20 V, suitable for diverse applications.

Typical gate charge of 0.39 nC enables low gate drive losses. Complies with automotive standard AEC-Q101 for reliability in automotive systems. Thermal operating range up to 150°C ensures stable performance. Device configuration includes two elements per chip allowing dual operation.

Explore more discrete semiconductors and MOSFET products at EnvMart for advanced electronic component solutions suitable for industrial, automotive, and commercial electronics applications.