Infineon P-Channel MOSFET, Enhancement Mode, 3-Pin SOT-223, -3.70 A Drain Current, 60 V, 81 W Power ISP650P06NMXTSA1

Infineon ISP650P06NMXTSA1 is a high-performance P-Channel MOSFET designed for industrial and automotive electronic applications requiring reliable switching and efficient power management. Featuring an enhancement mode channel, it can handle continuous drain currents of -3.70 A and drain-source voltages up to 60 V, making it suitable for medium power circuits. The device is packaged in a compact 3-pin SOT-223 surface mount form factor which promotes easy PCB assembly and low parasitic inductance.

This MOSFET's construction ensures low on-resistance (65 mΩ max), contributing to minimal conduction losses and improved thermal performance with a power dissipation capability of up to 81 W. It operates safely over a broad temperature range from -55°C to +150°C, ensuring durability in harsh environments especially in automotive contexts.

The ISP650P06NMXTSA1 supports gate voltages up to 20 V with a typical forward voltage drop of 1.1 V, enabling fast and precise switching suitable for high-frequency applications. The typical gate charge of 80 nC at a specific gate voltage level provides reliable drive characteristics while interfacing with modern microcontroller units and logic-level devices.

Compliance with RoHS directives ensures the device is free from hazardous substances, and adherence to AEC-Q101 automotive standards guarantees robust performance under automotive operating conditions. This makes the MOSFET ideal for power management, motor control, and load switching in automotive, industrial, and consumer electronics sectors.

This MOSFET operates in enhancement mode with a maximum power dissipation of 81 W. It features a low maximum drain-source resistance of 65 mΩ for efficiency. Designed for a wide operating temperature range from -55°C to +150°C.

Equipped with a 20 V maximum gate-source voltage and a typical gate charge of 80 nC at Vgs. Complies with RoHS and Automotive AEC-Q101 standards for quality and environmental safety. Suitable for fast switching applications and rugged avalanche conditions.

Compatible with logic level interfaces and microcontroller units (MCUs).

The Infineon ISP650P06NMXTSA1 P-Channel Enhancement MOSFET offers a reliable and efficient solution for engineers designing power control circuits in various industrial, automotive, and electronic device manufacturing applications. EnvMart provides comprehensive access to this and other discrete semiconductor components for professional assembly and production needs.