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IXYS N-Channel IGBT Module 90 A 1200 V 7-Pin Y4-M5 Surface Mount MII75-12A3

Category IGBT Module Brand IXYS Condition New

Specifications

Country of Origin India
Brand IXYS
Height 30mm
Length 94mm
Model MII75-12A3
Width 34mm
Mount Type Surface
Series NPT
Maximum Operating Temperature 150°C
Package Type Y4-M5
Minimum Operating Temperature -40°C
Pin Count 7
Maximum Continuous Collector Current Ic 90A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 2.7V
Channel Type N
Maximum Power Dissipation Pd 370W
Maximum Gate Emitter Voltage VGEO 20 V

Key Features

  • Features a 7-pin Y4-M5 package for surface mounting.
  • Supports a maximum power dissipation of 370W to handle substantial loads.
  • Operates reliably from -40°C up to 150°C temperature range.
  • Maximum switching speed of 30kHz enables efficient high-frequency operation.
  • Maximum gate emitter voltage rating of 20 V ensures safe drive levels.
  • Compact dimensions with length 94mm, width 34mm, and height 30mm.
  • Maximum collector emitter saturation voltage of 2.7V minimizes conduction losses.
  • Designed with N-channel semiconductor technology for high efficiency.

Product Description

The IXYS MII75-12A3 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) Module designed for critical power switching applications. This device combines the advantages of MOSFET gate drive characteristics with the high current and low voltage drop properties of bipolar transistors, making it suitable for efficient power conversion and control.

Featuring a maximum continuous collector current (Ic) of 90A and a maximum collector emitter voltage (Vceo) of 1200V, this module is capable of handling demanding electrical loads with ease. The robust construction supports a maximum power dissipation (Pd) of 370W, allowing reliable operation under high thermal and electrical stress.

This module incorporates a 7-pin Y4-M5 surface mount package, facilitating easy integration into existing circuit designs. Its compact form factor with dimensions 94mm by 34mm and a height of 30mm ensures space-efficient installation in constrained environments.

The MII75-12A3 supports high switching speeds up to 30kHz, enabling applications in power inverters, motor drives, and industrial power supplies. It is rated for a maximum gate emitter voltage of 20 V and withstands operating temperatures ranging from -40°C to 150°C to provide thermal flexibility for various industrial environments.

Key electrical characteristics include a maximum collector emitter saturation voltage (VceSAT) of 2.7V, ensuring low conduction losses for improved efficiency. The N-channel configuration makes it optimal for high-side switching applications.

7-pin Y4-M5 surface mount package for easy PCB integration. High continuous current and voltage ratings suitable for industrial power electronics. Wide operating temperature range supporting -40°C to 150°C. Fast switching capability at 30kHz for efficient performance.

Low saturation voltage reduces heat dissipation and energy losses. Compact dimensions facilitate integration into space-limited systems. N-channel IGBT technology for excellent switching and conduction performance. Reliable under high power dissipation up to 370W.

This module is suitable for use in industrial manufacturing, automation control systems, power inverters, motor drives, and HVAC equipment where reliable and efficient switching devices are crucial. Its design optimizes both switching speed and losses, making it an excellent choice for demanding applications.

Explore a wide range of semiconductor modules and components on EnvMart for all your industrial and professional electronic projects.

Explore more products in our IGBT Module category.

IXYS N-Channel IGBT Module 90 A 1200 V 7-Pin Y4-M5 Surface Mount MII75-12A3
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Frequently Asked Questions

The maximum continuous collector current (Ic) of the IXYS MII75-12A3 is 90A.

This model has a maximum collector emitter voltage (Vceo) rating of 1200V.

It supports a maximum power dissipation of 370W, allowing it to handle substantial loads effectively.

The module has compact dimensions of 94mm in length, 34mm in width, and 30mm in height.

The maximum operating temperature for the IXYS MII75-12A3 is 150°C.

It operates reliably from a minimum temperature of -40°C.

The maximum gate emitter voltage rating for this model is 20V.

The maximum collector emitter saturation voltage (VceSAT) is 2.7V, which helps minimize conduction losses.

It has a maximum switching speed of 30kHz, enabling efficient high-frequency operation.

This model features a 7-pin Y4-M5 package designed for surface mounting, facilitating easy integration into circuit designs.

It is suitable for applications in power inverters, motor drives, industrial power supplies, and HVAC equipment.

This IGBT module is designed with N-channel semiconductor technology, which is optimal for high-side switching applications.

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