World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Become Seller

For Bulk Enquiry: sales@envmart.com

DiodesZetex N-Channel MOSFET 30 V 1.4 A Enhancement Mode 3-Pin SOT-23 ZXM61N03FTA

Free Delivery in India | Lowest Global Shipping Charges

DiodesZetex N-Channel MOSFET 30 V 1.4 A Enhancement Mode 3-Pin SOT-23 ZXM61N03FTA

Name: DiodesZetex N-Channel MOSFET 30 V 1.4 A Enhancement Mode 3-Pin SOT-23 ZXM61N03FTA
Brand: DiodesZetex
SKU: 317407
Price: 0.2 USD
Availability: InStock



Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	Korea
Brand	DiodesZetex
Height	1mm
Length	3.05mm
Model	ZXM61N03FTA
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	1.4A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	300mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	806mW
Typical Gate Charge Qg @ Vgs	4.1nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	950mV

Key Features

This enhancement mode MOSFET offers a maximum power dissipation of 806 mW.
The device features a low drain-source resistance (Rds) of 300 milliohms for efficient switching.
It supports a gate-source voltage range of -20 V to +20 V.
Typical gate charge is 4.1 nC at Vgs, enabling fast switching performance.
Operating temperature range spans from -55°C to a maximum of 150°C for reliable industrial use.
The transistor is housed in a compact SOT-23 3-pin surface mount package with dimensions 3.05 mm length, 1.4 mm width, and 1 mm height.
The MOSFET complies with AEC-Q101 automotive standards, suitable for automotive and high-reliability applications.

Product Description

DiodesZetex ZXM61N03FTA is a high-quality N-Channel MOSFET transistor designed for efficient switching applications requiring a maximum continuous drain current of 1.4 A and a maximum drain-source voltage of 30 V. This device operates in enhancement mode and is ideal for surface mount circuit designs using the industry-standard 3-pin SOT-23 package.

Its low on-resistance of 300 milliohms helps minimize conduction losses, improving overall circuit efficiency. With a maximum power dissipation of 806 mW and a typical gate charge of 4.1 nC, the MOSFET supports fast and reliable switching performance in various electronic applications.

The transistor operates reliably within a broad temperature range from -55°C to 150°C, making it suitable for demanding industrial, automotive, and commercial electronics environments. It meets the AEC-Q101 automotive standard, ensuring component robustness and suitability for vehicle electronics.

The compact SOT-23 package measures 3.05 mm in length, 1.4 mm in width, and 1 mm in height, allowing space-saving PCB layout and automated surface mount assembly processes.

Typical uses include power management circuits, switching regulators, load switching, and signal amplification in industrial controls, automotive electronics, and consumer devices.

This MOSFET features enhancement mode channel operation for effective switching control. Peak gate-source voltage rating of ±20 V ensures robust gate drive tolerance. Low forward voltage of 950 mV reduces power loss during conduction.

It is designed for surface mounting, enabling compact and efficient PCB layouts. The device is RoHS compliant, supporting environmentally responsible manufacturing. Explore more MOSFET and discrete semiconductor products within the Electronics & Electricals category on EnvMart for advanced electronic component solutions.