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onsemi N-Channel MOSFET 12 A, 650 V, Enhancement Mode, 4-Pin Power88 Package FCMT250N65S3

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onsemi N-Channel MOSFET 12 A, 650 V, Enhancement Mode, 4-Pin Power88 Package FCMT250N65S3

Name: onsemi N-Channel MOSFET 12 A, 650 V, Enhancement Mode, 4-Pin Power88 Package FCMT250N65S3
Brand: onsemi
SKU: 319121
Price: 3.44 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	Philippines
Brand	onsemi
Height	1.05mm
Length	8mm
Model	FCMT250N65S3
Width	8mm
Mount Type	Surface
Series	FCMT
Maximum Operating Temperature	150°C
Package Type	Power88
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	12A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	250mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	90W
Typical Gate Charge Qg @ Vgs	24nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V
Internal Gate Resistance	0.5 Ω

Key Features

This MOSFET features a maximum drain-source resistance of 250 milliohms.
It has a maximum continuous drain current of 12 amps and a voltage rating of 650 volts.
The device supports a maximum gate-source voltage of 30 volts for stable operation.
It delivers a low typical gate charge of 24 nano-Coulombs, optimizing switching efficiency.
Maximum power dissipation is rated at 90 watts, suitable for high performance circuits.
The temperature operating range extends from -55 to 150 degrees Celsius.
It is supplied in a surface mount Power88 package with dimensions 8 mm by 8 mm by 1.05 mm.
The MOSFET incorporates ultra-thin SMD packaging technology with extremely low gate noise and switching loss.

Product Description

onsemi FCMT250N65S3 is a high voltage N-Channel enhancement mode MOSFET designed to handle continuous drain currents of up to 12 A and drain-source voltages of 650 V. Packaged in a compact 4-pin Power88 surface mount package, it offers excellent performance for industrial, telecommunication, computing, and LED lighting applications.

This device employs ON Semiconductor's advanced SUPERFET III technology featuring super-junction architecture with charge balance technology for remarkably low on-resistance (typical RDS(on) of 210 mΩ) and reduced gate charge (typical Qg of 24 nC). Such characteristics lead to minimized conduction losses and superior switching efficiency, making it well-suited for high density power systems.

The MOSFET package is ultra-thin, leadless, and optimized for low noise and lower switching losses with an internal gate resistance of approximately 0.5 Ω. It withstands high dv/dt rates, enhancing system reliability even under demanding switching conditions.

Rated for operation between -55°C and 150°C, this component is ideal for use in telecom/server adapters, industrial power supplies, and LED lighting control circuits. It delivers a forward voltage drop of 1.2 V and is manufactured under strict quality control in the Philippines.

The package dimensions are 8 mm width, 8 mm length, and 1.05 mm height, suitable for high density surface mount PCB designs. Moisture sensitivity level 1 ensures excellent robustness during manufacturing and handling.

This MOSFET provides higher system reliability at low temperature operation. It offers high power density and low gate noise for efficient switching. Its ultra-low gate charge reduces switching loss and peak voltage oscillations.

Optimized capacitance and conduction loss characteristics improve overall power efficiency. Suitable for use in computing, telecom, industrial, and LED lighting applications. Explore more semiconductors and power MOSFETs for your design requirements on EnvMart.