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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | DMP2240UW-7 |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-70 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 240mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250mW |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -0.9V |
DiodesZetex DMP2240UW-7 is a P-Channel Enhancement Mode MOSFET designed for efficient switching in low-voltage electronic circuits. Packaged in a compact 3-pin SC-70 surface mount form factor, this device supports a maximum continuous drain current of 1.5 amperes and a drain-source voltage of up to 20 volts, making it appropriate for battery management, power regulation, and signal switching applications.
Designed for demanding thermal environments, this MOSFET maintains functionality within a wide temperature range from -55°C to 150°C. The device has a maximum power dissipation rating of 250 milliwatts and a low drain-source resistance of 240 milliohms, which minimizes on-state losses and improves overall efficiency.
It complies with the automotive standard AEC-Q101, reflecting its robustness and suitability for automotive electronics and industrial uses. The maximum gate-source voltage range of -12 to +12 volts provides reliable gate control, preventing damage while ensuring adequate switching performance.
The physical dimensions of length 2.2 mm, width 1.35 mm, and height 1 mm facilitate integration into densely packed circuit boards. The forward voltage drop of approximately -0.9 volts helps optimize energy consumption in power-sensitive designs.
Operates as a P-Channel Enhancement Mode MOSFET ideal for low-voltage switching. Compact surface mount SC-70 package supports efficient PCB layout integration. Maximum drain current of 1.5 A suitable for moderate power loads.
Wide temperature range from -55°C to +150°C enhances reliability in harsh environments. Meets automotive AEC-Q101 standard for high-quality automotive applications. Low on-resistance of 240 mΩ reduces power losses during conduction.
Forward voltage approximately -0.9 V for improved power efficiency. Gate-source voltage tolerance of -12 V to +12 V ensures device protection and control. Physical size supports use in compact electronic assemblies.
This MOSFET is ideal for industrial electronics, automotive systems, power management circuits, and manufacturing equipment requiring reliable and efficient semiconductor switching components.
Explore the full range of DiodesZetex MOSFET devices and semiconductor components available at EnvMart for your specialized electronic design requirements.
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