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Vishay N-Channel MOSFET 65 A, 200 V Enhancement, Surface Mount, 3-Pin TO-263 Package SUM65N20-30-E3

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Vishay N-Channel MOSFET 65 A, 200 V Enhancement, Surface Mount, 3-Pin TO-263 Package SUM65N20-30-E3

Name: Vishay N-Channel MOSFET 65 A, 200 V Enhancement, Surface Mount, 3-Pin TO-263 Package SUM65N20-30-E3
Brand: Vishay
SKU: 315929
Price: 4.84 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	4.826mm
Length	10.41mm
Model	SUM65N20-30-E3
Width	9.65mm
Mount Type	Surface
Series	SUM65N20-30
Maximum Operating Temperature	175°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	65A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	84mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	375W
Typical Gate Charge Qg @ Vgs	90nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1V

Key Features

Features a low drain source resistance of 84 milliohms for efficient switching performance.
Supports a maximum gate source voltage range from -20 V to +20 V.
Rated for maximum power dissipation of 375 watts to enable high power handling.
Operates over a wide temperature range from -55°C to 175°C, suitable for harsh environments.
Typical gate charge is 90 nanocoulombs at rated gate source voltage for fast switching.
Compact dimensions include length 10.41 mm, width 9.65 mm, and height 4.826 mm.
Ideal for applications in power electronics, industrial controls, and motor drives.

Product Description

The Vishay SUM65N20-30-E3 is a high-performance N-Channel MOSFET designed for use in power management and switching applications. It supports a maximum continuous drain current of 65 A and withstands a maximum drain-source voltage of 200 V. Its enhancement mode channel ensures that the device conducts only when gate voltage is applied, providing efficient power control in circuits.

Housed in a surface mount TO-263 package with 3 pins, this MOSFET features a low drain-source resistance of 84 milliohms, minimizing conduction losses and improving overall circuit efficiency. The device operates reliably in extreme temperature conditions from -55°C to 175°C, making it suitable for industrial and automotive electronics environments.

The gate-source voltage rating of -20 V to +20 V allows flexibility in control voltages, while a maximum power dissipation of 375 W supports high-power applications. Typical gate charge at rated gate voltage is 90 nC, enabling fast switching speeds, critical in PWM motor control and power regulation systems.

This MOSFET measures approximately 10.41 mm in length, 9.65 mm in width, and 4.826 mm in height. Its compact form factor facilitates integration into dense PCB layouts commonly found in modern electronic equipment.

Among its industrial applications are power conversion systems, DC-DC converters, motor drivers, and electronic load switches. It is widely used in electronics manufacturing, industrial automation, and power supply designs.

Low drain-source resistance enhances energy efficiency. Wide operating temperature range ensures reliability. High maximum power dissipation suits heavy-load conditions. Compact 3-pin TO-263 surface mount package optimizes PCB space.

High gate-source voltage tolerance offers control flexibility. Fast switching with typical gate charge of 90 nC. Robust design for demanding industrial and automotive use cases. Explore more high-quality discrete semiconductors and MOSFETs from leading brands at EnvMart for your electronic component needs.