DiodesZetex Isolated Dual N-Channel and P-Channel MOSFET, 7.6 A Continuous Drain Current, 30 V Drain Source DMC3028LSDX-13

DiodesZetex DMC3028LSDX-13 is a high-quality isolated dual-channel MOSFET featuring both N-channel and P-channel types with enhancement mode operation. The device supports a continuous drain current of 7.6 A and a maximum drain-source voltage of 30 V, making it suitable for robust power switching tasks in industrial and automotive electronics.

This MOSFET is integrated into an 8-pin SOIC surface mount package with precise dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height, facilitating efficient PCB layout and compact system design. With maximum power dissipation rated at 1.2 W, it ensures thermal stability during operation at temperatures ranging from -55°C up to +150°C.

The device exhibits a maximum drain-source resistance (Rds) of 41 mΩ, ensuring low conduction losses and enhancing energy efficiency. The typical gate charge of 6 nC allows for rapid switching, making it ideal for switching regulators, motor control circuits, and other power electronics applications. The MOSFET also offers a minimal forward voltage drop of 0.7 V.

Certified to automotive standard AEC-Q101 and meeting strict industry standards including MIL-STD-202, RoHS, UL 94V-0 flammability rating, and J-STD-020 compliance, this MOSFET guarantees reliability and safety for critical applications. Its isolated transistor configuration reduces interference and cross-talk, beneficial in sensitive circuit designs. Dual-element chips integrate both N and P channels, enabling versatile usage.

The device is primarily manufactured in China and is developed for use in automotive, industrial, power management, and consumer electronics sectors. Its surface mount SOIC package supports modern automated assembly processes for high-volume manufacturing.

Key features include low Rds(on), high temperature tolerance, dual N and P channels, and substantial power handling capabilities. This MOSFET enhances circuit efficiency and compactness while complying with stringent quality and reliability standards.

Find more high-performance MOSFETs and semiconductor components in the Electronics & Electricals category at EnvMart. Features enhancement mode operation ensuring stable transistor switching behavior. Encapsulated in a compact 8-pin SOIC surface mount package with dimensions 4.95 mm length and 3.95 mm width.

Offers a maximum power dissipation of 1.2 W for reliable performance under load. Operable across a wide temperature range from -55°C to +150°C for industrial use. Low maximum drain-source resistance of 41 mΩ optimizes conduction efficiency.

Typical gate charge of 6 nC supports fast switching speeds. Complies with automotive standard AEC-Q101 and industry certifications including MIL-STD-202, RoHS, UL 94V-0, and J-STD-020. Forward voltage drop is minimal at 0.7 V, enhancing power efficiency.

The transistor configuration is isolated, ideal for preventing cross-talk in circuits. Contains two elements per chip, integrating dual functionality in a single device. Explore EnvMart for a wide range of discrete semiconductor solutions to meet various industrial and commercial electronics needs.