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Vishay N-Channel Power MOSFET 1.4 A 600 V Enhancement 3-Pin IPAK IRFU1N60APBF
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Vishay |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFU1N60APBF |
| Width | 2.39mm |
| Mount Type | Through Hole |
| Series | IRFU1N60A |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 7Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 36W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- Offers 600V maximum drain-source voltage for high-voltage switching applications.
- Supports continuous drain current up to 1.4 A ensuring moderate load handling capability.
- Features 7Ω maximum drain-source resistance to minimize conduction losses.
- Enables power dissipation up to 36W to handle sustained thermal loads effectively.
- Typical gate charge is 14nC supporting efficient gate-drive behavior.
- Gate-source voltage withstand capability ranges from -30V to +30V suitable for robust control voltages.
- Operates reliably in temperatures ranging from -55°C to 150°C for industrial environments.
- Supplied in a 3-pin IPAK through-hole package for secure mounting.
Product Description
Vishay IRFU1N60APBF is a high-voltage N-Channel Power MOSFET designed to meet the demands of industrial electronics with a 600V drain-source voltage and 1.4A continuous drain current rating. This enhancement mode device is supplied in a 3-pin IPAK through-hole package ensuring reliable mechanical mounting on circuit boards for industrial and commercial electronic assemblies.
It features a maximum drain-source resistance (Rds) of 7Ω to ensure low conduction losses and enable efficient power handling with a power dissipation rating up to 36W. The typical gate charge of 14nC makes it compatible with efficient gate-drive circuits, and it is designed to tolerate gate-source voltages between -30V and +30V for robust control.
The IRFU1N60APBF is qualified to operate in extreme thermal conditions from -55°C to 150°C, making it suitable for harsh industrial and automotive environments. With a typical forward voltage of 1.6V during body diode conduction, this device is also practical for power switching and load management.
Its applications include offline power supplies, lighting ballast control circuits, low-power motor drive stages, converter snubber or clamp switches, as well as sensor and measurement front-end systems requiring high voltage capability.
The device complies with RoHS directives, ensuring environmentally responsible usage, and is manufactured in Malaysia to high industrial standards. Offers 600V maximum drain-source voltage for high-voltage switching applications.
Supports continuous drain current up to 1.4 A ensuring moderate load handling capability. Features 7Ω maximum drain-source resistance to minimize conduction losses. Enables power dissipation up to 36W to handle sustained thermal loads effectively.
Typical gate charge is 14nC supporting efficient gate-drive behavior. Gate-source voltage withstand capability ranges from -30V to +30V suitable for robust control voltages. Operates reliably in temperatures ranging from -55°C to 150°C for industrial environments.
Supplied in a 3-pin IPAK through-hole package for secure mounting. Typical forward voltage is 1.6V for body-diode conduction scenarios. Complies with RoHS standards ensuring environmental safety. Explore our extensive range of industrial semiconductor components in the Electronics & Electricals category at EnvMart.
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Frequently Asked Questions
The maximum drain-source voltage of this model is 600V, making it suitable for high-voltage switching applications.
It supports a continuous drain current of up to 1.4 A, ensuring moderate load handling capability.
The maximum power dissipation is rated at 36W, allowing it to handle sustained thermal loads effectively.
The typical gate charge is 14nC, which supports efficient gate-drive behavior.
This model can withstand gate-source voltages ranging from -30V to +30V, suitable for robust control voltages.
It operates reliably in temperatures ranging from -55°C to 150°C, making it suitable for industrial environments.
It is supplied in a 3-pin IPAK through-hole package, ensuring secure mounting on circuit boards.
The maximum drain-source resistance is 7Ω, which helps minimize conduction losses.
The typical forward voltage during body diode conduction is 1.6V.
Yes, it complies with RoHS directives, ensuring environmentally responsible usage.
It is manufactured in Malaysia to high industrial standards.
It is suitable for applications including offline power supplies, lighting ballast control circuits, and low-power motor drive stages.
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