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onsemi N-Channel Enhancement Mode MOSFET 14 A 50 V 3-Pin TO-252 RFD14N05LSM9A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | RFD14N05LSM9A |
| Width | 6.22mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 14A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 100mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 48W |
| Typical Gate Charge Qg @ Vgs | 40nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
Key Features
- Enhancement mode N-Channel MOSFET with rugged and reliable performance.
- Maximum power dissipation of 48 W for demanding applications.
- Low on-state resistance of 100 mΩ minimizes power loss.
- Wide operating temperature range from -55°C to 175°C.
- Typical gate charge of 40 nC ensures fast switching capabilities.
- Designed for surface mount assembly with a compact TO-252 package.
- Maximum gate-source voltage rating is ±10 V for robust driving.
- Not certified for automotive applications.
Product Description
onsemi RFD14N05LSM9A is a high-performance N-Channel Enhancement Mode MOSFET designed for use in industrial and electronic semiconductor applications. It features a robust maximum continuous drain current rating of 14 A and can withstand drain source voltages up to 50 V. The device comes in a compact 3-pin TO-252 surface mount package, making it suitable for space-constrained electronics manufacturing.
This MOSFET offers a low drain-source resistance of 100 mΩ, achieved through the proprietary high cell density DMOS technology used in its fabrication. The device supports a maximum power dissipation of 48 W, ensuring efficient thermal management in power conversion and switching circuits.
Its typical gate charge of 40 nC enables rapid switching, making it ideal for high-frequency switching power supplies, motor control, and other power electronics applications. The MOSFET operates reliably over a wide temperature range of -55°C to 175°C, allowing use in harsh industrial environments.
The package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height, facilitating surface mount technology (SMT) assembly processes. The maximum gate-source voltage is rated at ±10 V, providing robustness to voltage spikes during operation.
Although it is not automotive rated, it is highly suitable for laboratory, industrial, HVAC, manufacturing, and commercial electronics applications that require reliable MOSFET performance.
Enhancement mode N-Channel technology for efficient power management. Surface mount TO-252 package optimized for industrial applications. Wide operating temperature range for reliable use in demanding environments. Low on-resistance enhances efficiency and reduces heat generation.
High gate voltage tolerance for strong switching capability. Explore more MOSFETs and semiconductor products at EnvMart to find suitable components for your electronics projects and industrial needs.
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Frequently Asked Questions
The maximum continuous drain current for the RFD14N05LSM9A is 14 A.
This model has a maximum drain-source voltage rating of 50 V.
It features a low on-state resistance of 100 mΩ, which helps minimize power loss.
The RFD14N05LSM9A can dissipate a maximum power of 48 W.
The typical gate charge is 40 nC, allowing for fast switching capabilities.
The package dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It operates reliably over a wide temperature range from -55°C to 175°C.
This model is designed for surface mount assembly.
The maximum gate-source voltage rating is ±10 V.
It is suitable for laboratory, industrial, HVAC, manufacturing, and commercial electronics applications.
The RFD14N05LSM9A has a pin count of 3.
This model features an N-channel type for enhancement mode operation.
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