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STMicroelectronics MDmesh N-Channel MOSFET, 12 A, 500 V Enhancement Mode, 3-Pin TO-220 STF14NM50N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STF14NM50N |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 320mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 25W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.6V |
Key Features
- The MOSFET features MDmesh technology for enhanced performance and efficiency.
- It operates with an enhancement mode channel and has a 3-pin configuration.
- Maximum drain-source resistance is 320 milliohms, supporting robust current flow.
- The device supports a maximum power dissipation of 25 watts, suitable for industrial applications.
- Operating temperatures range from -55°C minimum up to 150°C maximum, ensuring reliability under diverse conditions.
- Typical gate charge is 27 nanoCoulombs at gate-source voltage, facilitating fast switching.
- Maximum gate-source voltage ranges from -25V to +25V, providing good control and protection.
- The forward voltage drop is 1.6 volts, minimizing power loss during conduction.
Product Description
STMicroelectronics presents the STF14NM50N MDmesh N-Channel MOSFET, designed for discrete semiconductor applications requiring high voltage and current handling capabilities.
This device supports a maximum continuous drain current of 12 amperes and a drain-source voltage of 500 volts, operating in an enhancement mode configuration. Packaged in a durable TO-220 format with three pins, it is ideal for through-hole mounting in power switching and amplification circuits.
The MOSFET features a low maximum drain-source resistance of 320 milliohms, contributing to high efficiency with minimal conduction losses. It can dissipate up to 25 watts of power, making it suitable for industrial, automotive, and electronic power applications.
Its operating temperature range from -55°C to 150°C ensures reliable function in demanding environments. The typical gate charge of 27 nanoCoulombs enables swift switching performance, and the gate-source voltage tolerance from -25 to +25 volts provides robust control and protection.
Physical dimensions are compact, with a height of 16.4mm, length of 10.4mm, and width of 4.6mm, facilitating easy incorporation into various PCB designs requiring through-hole components.
The MOSFET employs STMicroelectronics' MDmesh technology to improve switching speed and reduce losses. Stable operation under high thermal and electrical stresses makes it apt for industrial power supply, motor control, and other heavy-duty applications.
Its packaging and pin configuration support ease of installation and reliable mechanical connection. The device complies with industry standards and is free from automotive-specific certifications. STMicroelectronics provides comprehensive technical resources including datasheets and design tools for effective integration.
Explore more power semiconductor devices and MDmesh MOSFETs from STMicroelectronics on EnvMart for robust and efficient electronic design solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 amperes.
It can handle a maximum drain-source voltage of 500 volts.
This model is packaged in a TO-220 format, suitable for through-hole mounting.
The maximum power dissipation for this device is 25 watts.
The typical gate charge is 27 nanoCoulombs at gate-source voltage.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 320 milliohms.
This device features an N-channel configuration and operates in enhancement mode.
The dimensions are 16.4mm in height, 10.4mm in length, and 4.6mm in width.
The forward voltage drop is 1.6 volts, which helps minimize power loss during conduction.
The maximum gate-source voltage ranges from -25V to +25V.
This model uses a through-hole mounting type for installation.
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