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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 13 A 1 kV Enhancement 3-Pin TO-247 STW13NK100Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW13NK100Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 13A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 700mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350W |
| Typical Gate Charge Qg @ Vgs | 190nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET enhances switching efficiency in power electronic applications.
- It features a robust MDmesh SuperMESH design ideal for high voltage and current demands.
- The device supports through-hole mounting and provides thermal and electrical stability.
- Maximum power dissipation is 350 W, supporting heavy-duty operations.
- Typical gate charge is 190 nC at gate-source voltage, ensuring efficient control.
- Minimum operating temperature is -55°C and maximum operating temperature is 150°C, suitable for harsh environments.
- The maximum gate-source voltage ranges from -30 V to +30 V, enabling flexible driving voltages.
- Forward voltage drop is 1.3 V, allowing efficient conduction.
Product Description
STMicroelectronics STW13NK100Z MDmesh SuperMESH N-Channel MOSFET is a high-performance power transistor designed for industrial and power electronics applications requiring high current and voltage handling capabilities. This enhancement mode MOSFET operates with a maximum continuous drain current of 13 A and a maximum drain-source voltage of 1 kV, encapsulated in a durable 3-pin TO-247 through-hole package.
The MDmesh SuperMESH technology provides low on-resistance and rapid switching capabilities, making this device ideal for power conversion, motor control, and other industrial electronics tasks. With a maximum power dissipation of 350 W and typical gate charge of 190 nC, it ensures efficiency and reliability during heavy electrical loads.
This MOSFET accommodates a wide operating temperature range from -55°C to 150°C, supporting performance in harsh environmental conditions. Its maximum gate-source voltage tolerance of -30 V to +30 V allows flexible gate drive configurations with stable forward voltage of only 1.3 V, optimizing conduction loss.
This MOSFET supports industrial power management and switching control tasks efficiently. Its compact physical size allows easy integration into existing circuit designs. Through-hole mounting ensures robust mechanical and electrical connections.
STMicroelectronics' MDmesh series is renowned for power handling capabilities and device longevity. The device provides consistent performance without automotive specification, focusing on general industrial use.
Ideal for circuits requiring reliable high-voltage and high-current switching, this MOSFET benefits sectors like industrial automation, power supplies, and manufacturing equipment. It supports designers aiming for durability and operational efficiency in demanding electrical projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 13 A.
It can handle a maximum drain-source voltage of 1 kV.
The maximum power dissipation for this MOSFET is 350 W.
The typical gate charge is 190 nC at gate-source voltage.
The operating temperature range is from -55°C to 150°C.
This model supports through-hole mounting.
The forward voltage drop is 1.3 V.
The maximum gate-source voltage ranges from -30 V to +30 V.
It comes in a TO-247 package type.
The maximum drain-source resistance is 700 mΩ.
This model has 3 pins.
It belongs to the MDmesh and SuperMESH series.
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