onsemi P-Channel Power MOSFET 15.5 A, 60 V, Enhancement Mode, 3-Pin TO-252 NTD20P06LT4G

onsemi presents the NTD20P06LT4G P-Channel Power MOSFET, a robust semiconductor device designed for efficient power management and switching applications. This enhancement-mode MOSFET features a 15.5 A maximum continuous drain current with a drain-source voltage rating of 60 V, making it ideal for demanding industrial and electronic circuits.

Packaged in a 3-pin TO-252 surface mount form factor, the device offers ease of integration onto printed circuit boards where compact size and thermal performance are crucial. Its low drain-source resistance at a maximum of 150 mΩ ensures reduced conduction losses, enhancing energy efficiency in power applications.

The device is engineered to operate over a wide range of environmental conditions, from -55°C minimum operating temperature to a maximum of 175°C, ensuring reliability under harsh conditions. The typical gate charge of 15 nC facilitates faster switching and reduces gate drive power losses, contributing to overall system performance.

Dimensions of 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height allow the MOSFET to fit compact designs, especially in surface mount technology applications. This makes it suitable for usage in industrial automation, power supplies, motor control, and other electronic systems requiring efficient P-Channel MOSFETs.

Additionally, the gate-source voltage range of -20 V to +20 V provides design flexibility for various gate driving circuits, ensuring compatibility with different voltage levels and control methods.

Overall, the onsemi NTD20P06LT4G provides a reliable and high-performance solution for electronic designers and engineers looking for a durable and efficient P-Channel MOSFET in the power semiconductor category.

This MOSFET operates in enhancement mode providing efficient switching performance. Maximum power dissipation is 65 W allowing for high power applications. Gate charge typical value is 15 nC ensuring responsive gate drive characteristics.

Operates safely over a wide temperature range from -55°C to 175°C. Low maximum drain-source resistance of 150 mΩ enhances conduction efficiency. Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height suit various PCB layouts.

Designed for surface mounting with standard TO-252 package for easy integration. Suitable for industrial and power management applications requiring reliable P-Channel MOSFET performance. Supports gate-source voltages between -20 V and +20 V, providing design flexibility.

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