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Vishay N-Channel MOSFET, 23 A, 250 V Enhancement Mode, 3-Pin TO-247 IRFP254PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFP254PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP254 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 23A |
| Maximum Drain Source Voltage Vds | 250V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 140nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-channel MOSFET,IRFP254 23A 250VBrand | Vishay |
Key Features
- Designed for enhancement mode operation providing efficient switching.
- Features a low maximum drain-source resistance of 140 milliohms.
- Supports a maximum power dissipation of 190 W for high power applications.
- Wide operating temperature range from -55°C to 150°C enables reliable performance.
- Equipped with a 3-pin through-hole mount TO-247 package for easy integration.
- Typical gate charge is 140 nC at rated gate voltage ensuring fast switching speeds.
- Maximum gate-source voltage rating of ±20 V protects device from overvoltage.
- Forward voltage drop is 1.8 V minimizing conduction losses.
Product Description
Vishay IRFP254PBF is a high-performance N-Channel MOSFET designed for power switching and amplification applications. It is rated for a continuous drain current of 23 A and a maximum drain-source voltage of 250 V, making it suitable for demanding industrial and commercial uses including power supplies, motor controls, and electronic converters.
This device operates in enhancement mode and utilizes a 3-pin TO-247 through-hole package, providing robust mounting and heat dissipation capabilities. With a maximum power dissipation of 190 W, it efficiently handles high power loads with minimized losses.
The MOSFET features a low on-resistance of 140 milliohms and a typical gate charge of 140 nC at the rated gate voltage, which helps achieve fast switching speeds and reduced switching losses. It supports a wide operating temperature range from -55°C to 150°C, ensuring durability in harsh environments.
Key protective features include a maximum gate-source voltage tolerance of ±20 V, protecting the device from voltage spikes. The forward voltage drop of 1.8 V contributes to lower conduction losses during operation. Its compact size (15.87 mm length, 5.31 mm width, and 20.7 mm height) facilitates integration into compact circuit boards.
Enhancement mode N-Channel MOSFET device. Maximum drain current of 23 A and voltage rating of 250 V. Low drain-source resistance of 140 mΩ to reduce power loss. High power dissipation capacity of 190 W for demanding applications.
Wide temperature operation from -55°C to 150°C improves reliability. 3-pin TO-247 through-hole package ensures strong mechanical support. Typical gate charge of 140 nC enables fast switching. Gate-source voltage rating ±20 V for device protection.
Forward voltage of 1.8 V minimizes voltage drop during conduction. Compact dimensions make it suitable for dense electronic assemblies.
This product is suitable for industrial and commercial applications including power electronics, motor drives, and switching regulators. It can be readily integrated into PCB assemblies requiring reliable high current switching capabilities.
Explore more options and related products in the Power MOSFET category at EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 23 A.
It has a maximum drain-source voltage rating of 250 V.
The maximum power dissipation capacity is 190 W, suitable for high power applications.
The typical gate charge at the rated gate voltage is 140 nC.
The forward voltage drop is 1.8 V, which helps minimize conduction losses.
It operates within a temperature range from -55°C to 150°C.
This model utilizes a 3-pin TO-247 through-hole package.
The maximum gate-source voltage rating is ±20 V, providing protection from overvoltage.
The dimensions are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
The maximum drain-source resistance is 140 milliohms.
This MOSFET is suitable for power electronics, motor drives, and switching regulators.
It features an N-channel configuration and operates in enhancement mode.
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