$23.16
$20.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay Depletion Mode N-Channel Power MOSFET 218 A 100 V 120 W 8-Pin PowerPAK SO-8DC SiDR626LEP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SiDR626LEP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8DC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 218A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 0.0021Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 46.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The 8-pin PowerPAK SO-8DC package provides excellent thermal management.
- Maximum power dissipation of 120 W supports demanding load conditions.
- Very low drain-source resistance of 0.0021 Ω for efficient conduction.
- Operating temperature range from -55°C to 125°C suits harsh environments.
- Typical gate charge of 46.1 nC at Vgs for fast switching performance.
- Forward voltage of 1.2 V enhances the switching efficiency.
- Surface mount type ensures compact PCB integration.
- Automotive grade standard AEC-Q101 certifies reliability.
Product Description
Vishay SiDR626LEP-T1-RE3 is a Gen IV depletion mode N-Channel Power MOSFET designed to operate with maximum continuous drain current of 218 A and a maximum drain-source voltage of 100 V. Encapsulated in an 8-pin PowerPAK SO-8DC surface mount package, the device provides superior thermal management through top side cooling features, making it suitable for high-power industrial and automotive applications.
This MOSFET features an ultra-low drain-source resistance (Rds) of 0.0021 Ω, minimizing conduction losses and improving overall efficiency for power conversion tasks. It offers a maximum power dissipation rating of 120 W, supporting high-load switching operations with robust reliability.
With a wide operating temperature range from -55°C to 125°C and typical gate charge of 46.1 nC at gate-source voltage, the SiDR626LEP-T1-RE3 is ideal for demanding environments such as solar microinverters, motor drives, and synchronous rectification applications. Forward voltage is rated at 1.2 V, ensuring efficient switching performance.
The automotive compliant AEC-Q101 standard confirms this MOSFET’s suitability for automotive electronics systems. Its compact dimensions (length 6.15 mm, width 5.15 mm) enable space-efficient PCB layouts.
This product is widely used in industrial, automotive, renewable energy, and power management applications where high reliability, efficiency, and thermal performance are critical. Vishay’s advanced trenchFET technology ensures excellent electrical characteristics and ruggedness for demanding power semiconductor roles.
The 8-pin PowerPAK SO-8DC package enables enhanced thermal management for power dissipation. Depletion mode N-channel MOSFET with ultra-low Rds optimizes conduction losses. High maximum drain current of 218 A supports demanding power applications.
Broad temperature range (-55°C to 125°C) allows operation in harsh conditions. Compliance with automotive AEC-Q101 standard ensures automotive grade reliability. Typical gate charge of 46.1 nC allows efficient switching in high-frequency circuits.
Surface mount package supports compact and efficient PCB design. Discover more innovative power semiconductor solutions by browsing our Electronics & Electricals category at EnvMart.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of the Vishay SiDR626LEP-T1-RE3 is 218 A.
This model has a maximum drain-source voltage of 100 V.
The maximum power dissipation rating is 120 W, suitable for high-load conditions.
It operates within a temperature range of -55°C to 125°C.
The typical gate charge at gate-source voltage is 46.1 nC.
The ultra-low drain-source resistance is 0.0021 Ω, which helps minimize conduction losses.
The device is encapsulated in an 8-pin PowerPAK SO-8DC package.
Yes, it complies with the automotive standard AEC-Q101, ensuring reliability for automotive applications.
The dimensions are 6.15 mm in length and 5.15 mm in width.
This model supports surface mounting, which allows for compact PCB integration.
The forward voltage is rated at 1.2 V, enhancing switching efficiency.
This MOSFET uses an N-channel type configuration, operating in depletion mode.
Related Products
Other Products from this brand
$1.64
$1.59
-3%
New
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$1.61
$1.57
-3%
New
$23.16
$20.22
Save 12.7%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent