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Vishay EF N-Channel Power MOSFET 6 A 850 V Depletion Mode 3-Pin TO-220 SIHA15N80AEF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIHA15N80AEF-GE3 |
| Mount Type | Surface |
| Series | EF |
| Maximum Operating Temperature | +150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 850V |
| Maximum Drain Source Resistance Rds | 0.35Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 54nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Operates at maximum drain source voltage of 850 V with 6 A continuous drain current capacity.
- Low 0.35 Ω maximum drain source resistance reduces conduction losses efficiently.
- TO-220 package allows easy surface mounting and enhanced thermal dissipation.
- Wide operating temperature range from -55°C to +150°C ensures reliability in harsh environments.
- Typical gate charge of 54 nC facilitates predictable gate drive and switching performance.
- Maximum power dissipation up to 33 W supports sustained thermal management.
- Meets automotive standard AEC-Q101 specifying robustness for automotive electronics.
- Maximum gate to source voltage rating of ±30 V protects against gate overstress.
Product Description
Vishay SIHA15N80AEF-GE3 is a high-voltage N-channel Power MOSFET from the EF series, designed to handle switching and power management tasks in demanding industrial and automotive environments. Rated for 6 A continuous current and a maximum drain-source voltage of 850 V, it supports medium power applications with excellent efficiency.
Housed in a TO-220 surface mount package, the device enables easy heat sinking options for effective thermal management. Its low on-resistance of 0.35 Ω minimizes conduction losses, contributing to energy-efficient operation. The MOSFET operates reliably across a wide temperature range from -55°C to +150°C, making it suitable for harsh ambient conditions encountered in industrial power converters and automotive electronics systems that comply with the AEC-Q101 standard.
The typical gate charge of 54 nC informs gate driver design, allowing for predictable switching and gate control performance. With a maximum power dissipation of 33 W, the device can sustain continuous operation under rated loads. The ±30 V gate-to-source voltage rating protects the transistor from damage due to excessive gate voltage, ensuring device longevity.
Common applications include industrial high-voltage power converters, automotive electronic systems, switch-mode power supplies, inverters, motor drive front-end switching, and auxiliary power supply stages in harsh environments.
Offers 850 V drain-source voltage and 6 A continuous drain current ratings for medium-power switching. TO-220 package supports effective surface mounting and thermal dissipation. Low Rds(on) of 0.35 Ω reduces conduction power loss under load.
Suitable for automotive applications with AEC-Q101 qualification. Wide temperature tolerance from -55°C to +150°C ensures operational reliability. Typical gate charge of 54 nC aids in precise gate drive design. Maximum power dissipation capacity of 33 W for sustained thermal performance.
±30 V maximum gate-source voltage offers protection against overvoltage stress.
Explore the comprehensive range of Vishay power semiconductors at EnvMart for industrial, automotive, and commercial electronics designs requiring rugged and reliable performance components.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 850 V.
It has a continuous drain current capacity of 6 A.
The maximum power dissipation is 33 W, supporting sustained thermal management.
This device is housed in a TO-220 package type, allowing for easy surface mounting.
The typical gate charge is 54 nC, which aids in gate driver design.
The maximum gate-source voltage rating is ±30 V, providing protection against gate overstress.
It operates within a temperature range of -55°C to +150°C, ensuring reliability in harsh environments.
The maximum drain-source resistance is 0.35 Ω, which reduces conduction losses efficiently.
It meets the automotive standard AEC-Q101, specifying robustness for automotive electronics.
This model features an N-channel type, suitable for various power management applications.
Common applications include industrial high-voltage power converters, automotive electronic systems, and switch-mode power supplies.
This MOSFET has a pin count of 3, which is typical for its package type.
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