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Vishay N-Channel MOSFET PowerPAK 1212-8SLW 40 V 214 A Depletion Mode SQS140ENW-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 3.3mm |
| Model | SQS140ENW-T1_GE3 |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK 1212-8SLW |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 214A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 0.000253Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 197W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Utilizes advanced TrenchFET Gen IV technology for high efficiency.
- Low on-resistance of 0.000253 Ω ensures minimal conduction losses.
- Surface mount package with 8-pin PowerPAK 1212-8SLW footprint.
- Operates reliably between -55°C and 125°C for wide application range.
- Maximum gate-source voltage rating of ±20 V ensures robust gate control.
- Typical forward voltage drop of 1.1 V for effective power management.
- Gate charge of 38 nC at Vgs facilitates fast switching performance.
- Maximum power dissipation rated at 197 W for high power density usage.
Product Description
Vishay SQS140ENW-T1_GE3 is a high-performance N-Channel Power MOSFET employing TrenchFET Gen IV technology, optimized for high power density and efficiency in electronic designs. This 8-pin PowerPAK 1212-8SLW surface mount device supports a maximum continuous drain current of 214 A and withstands a maximum drain-source voltage of 40 V.
Designed for applications requiring robust and efficient switching, the MOSFET provides low on-resistance of 0.000253 Ω which minimizes conduction losses and improves overall power efficiency. It operates within a wide temperature range from -55°C to 125°C, enabling usage in challenging industrial and automotive environments.
The device features a maximum gate-source voltage of ±20 V, ensuring safe gate drive voltage margins, and a forward voltage drop of 1.1 V, contributing to reduced power wastage. The typical gate charge of 38 nC at Vgs supports fast switching speeds essential for modern power electronics.
With a maximum power dissipation of 197 W, this MOSFET is suitable for high power density circuits and applications. It complies with the AEC-Q101 automotive standard, verifying reliability and durability for automotive systems.
The compact package length of 3.3 mm and surface mount configuration optimize PCB space and enable automated assembly processes. The Vishay SQS140ENW-T1_GE3 MOSFET is ideal for use in industrial electronics, automotive electronics, power management circuits, and other applications demanding high efficiency and reliability.
Utilizes advanced TrenchFET Gen IV technology for efficiency and performance. Low on-resistance reduces power loss and improves system efficiency. Wide operating temperature range supports harsh environmental conditions.
Compact PowerPAK package ideal for dense PCB layouts. Certified to automotive AEC-Q101 standard for automotive-grade reliability. Explore the Vishay range of Power MOSFETs on EnvMart to find components tailored for industrial, automotive, and electronic manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 214 A.
It has a maximum drain-source voltage rating of 40 V.
The on-resistance of this unit is 0.000253 Ω, which helps minimize conduction losses.
This model operates reliably between -55°C and 125°C.
The typical forward voltage drop for this MOSFET is 1.1 V.
The typical gate charge at Vgs is 38 nC, facilitating fast switching performance.
It has a maximum power dissipation rated at 197 W.
This device complies with the AEC-Q101 automotive standard, ensuring reliability for automotive applications.
The package type is PowerPAK 1212-8SLW, which is a surface mount configuration.
This MOSFET features an 8-pin configuration.
It utilizes an N-channel design and operates in depletion mode.
The length of this model is 3.3 mm, optimizing PCB space for assembly.
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