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Infineon 700V CoolMOS P7 N-Channel MOSFET, 6A, 700V Enhancement Mode, 3-Pin TO-220 IPAN70R900P7SXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IPAN70R900P7SXKSA1 |
| Mount Type | Through Hole |
| Series | 700V CoolMOS P7 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 17.9W |
| Typical Gate Charge Qg @ Vgs | 6.8nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 900mV |
Key Features
- Offers extremely low losses with low figure of merit on resistance and gate charge.
- Excellent thermal behavior ensures reliable performance under heavy load.
- Integrated ESD protection diode guards against electrostatic damage.
- Designed with low switching losses (Eoss) for high efficiency.
- Suitable for through-hole mounting in compact power supplies.
- Operates within a temperature range of -55°C to 150°C.
- Maximum continuous drain current of 6 amperes and drain-source voltage of 700 volts.
- Typical gate charge of 6.8 nC at gate-source voltage.
Product Description
Infineon IPAN70R900P7SXKSA1 700V CoolMOS P7 N-Channel MOSFET is a power semiconductor device featuring a 700-volt drain source voltage rating and continuous drain current capability of 6 amperes. It uses the advanced CoolMOS P7 super junction technology optimized for low power switch mode power supplies such as mobile phone chargers and notebook adapters.The 3-pin TO-220 package supports through-hole mounting and provides excellent thermal characteristics with a maximum operating temperature of 150°C. This device maintains extremely low losses due to a low figure of merit combining on-resistance and gate charge, delivering high efficiency and power density in compact, cost-sensitive consumer electronics.Its key features include integrated electrostatic discharge (ESD) protection diode and low switching losses (Eoss), making it suitable for high-frequency switching applications. The typical gate charge of 6.8 nC at the specified gate-source voltage provides responsive switching behavior.Operating temperature is rated from -55°C to 150°C, accommodating harsh industrial and consumer environments. The MOSFET's maximum power dissipation is 17.9 watts, ensuring robust performance under high load currents.This MOSFET is ideally suited for use in industrial power management, laboratory power supply designs, construction equipment electronics, HVAC systems, manufacturing devices, water treatment controllers, agricultural machinery, and commercial electronics.
Extremely low losses due to very low RDS(on)*Qg and RDS(on)*Eoss product of figure of merit. Excellent thermal behavior. Integrated electrostatic discharge (ESD) protection diode. Low switching losses (Eoss) for improved efficiency.
Compact 3-pin TO-220 through-hole package. Wide operating temperature range from -55°C to 150°C. Explore more advanced semiconductor solutions and power MOSFETs at EnvMart’s Electronics & Electricals category for efficient circuit design and power applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 amperes.
This MOSFET has a maximum drain-source voltage rating of 700 volts.
The typical gate charge for this model is 6.8 nC at the specified gate-source voltage.
It comes in a TO-220 package type, which supports through-hole mounting.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation for this MOSFET is 17.9 watts.
This model features a 3-pin configuration.
It has an N-channel type, designed for enhancement mode operation.
Yes, it includes an integrated electrostatic discharge (ESD) protection diode.
The maximum gate-source voltage for this model is 20 volts.
This MOSFET is suitable for applications in power management, mobile phone chargers, notebook adapters, and various industrial electronics.
The maximum drain-source resistance (Rds) is 900 mΩ.
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