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Vishay EF N-Channel Power MOSFET 600 V 8.4 A 33 W TO-220 Enhancement 3-Pin SiHA186N60EF-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.3mm |
| Length | 28.1mm |
| Model | SiHA186N60EF-GE3 |
| Width | 9.7mm |
| Mount Type | Through Hole |
| Series | EF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 168mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 33W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- This MOSFET supports a maximum power dissipation of 33 W with effective heatsinking.
- Enhancement mode device with a low on-resistance of 168 mΩ minimizes conduction losses.
- Maximum gate-source voltage rating of ±30 V allows common gate drive voltages.
- Typical gate charge of 21 nC ensures efficient switching performance.
- Wide operating temperature range from -55°C to 150°C ensures robustness in diverse environments.
- Through-hole mounting type with 3 pins simplifies integration into industrial circuits.
- Forward voltage drop is typically 1.2 V under rated conditions.
- RoHS compliant ensuring environmental safety standards.
Product Description
Vishay SiHA186N60EF-GE3 is an EF series N-Channel Power MOSFET providing 600 V drain-source voltage and 8.4 A maximum continuous drain current. Packaged in a reliable TO-220 through-hole form factor, it suits high-voltage switched power applications requiring robust performance and compact footprint.
This enhancement-mode transistor features a low on-resistance of 168 mΩ which effectively reduces conduction losses during operation. It supports a maximum power dissipation of 33 W when mounted on appropriate heatsinks, enabling sustained operation within a wide temperature range of -55°C to 150°C.
The device’s maximum gate-source voltage tolerance of ±30 V and typical gate charge of 21 nC facilitate predictable switching and gate driver design. A typical forward voltage of 1.2 V complements its efficiency characteristics.
Vishay's SiHA186N60EF-GE3 is RoHS compliant and does not carry automotive-specific approvals, making it suitable for industrial, laboratory, and power supply designs but not for automotive-certified systems.
Common applications include high-voltage switch-mode power supplies, industrial motor drive front ends, renewable energy inverter power conversion, lighting ballasts, and prototyping where through-hole mounting is preferred.
This MOSFET supports a maximum power dissipation of 33 W with effective heatsinking. Enhancement mode device with a low on-resistance of 168 mΩ minimizes conduction losses. Maximum gate-source voltage rating of ±30 V allows common gate drive voltages.
Typical gate charge of 21 nC ensures efficient switching performance. Wide operating temperature range from -55°C to 150°C ensures robustness in diverse environments. Through-hole mounting type with 3 pins simplifies integration into industrial circuits.
Forward voltage drop is typically 1.2 V under rated conditions. RoHS compliant ensuring environmental safety standards. Ideal for switch-mode power supplies, motor control, and power conversion applications. Discover more power electronic components and semiconductor devices at EnvMart, your source for industrial-grade electronics.
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Frequently Asked Questions
The Vishay SiHA186N60EF-GE3 has a maximum drain-source voltage of 600 V.
This model supports a maximum continuous drain current of 8.4 A.
The maximum power dissipation for this MOSFET is 33 W when mounted on appropriate heatsinks.
The typical gate charge for the SiHA186N60EF-GE3 is 21 nC.
The dimensions of the TO-220 package are 28.1 mm in length, 9.7 mm in width, and 4.3 mm in height.
The on-resistance of this N-channel MOSFET is 168 mΩ, which helps minimize conduction losses.
The operating temperature range for the SiHA186N60EF-GE3 is from -55°C to 150°C.
This MOSFET uses a through-hole mounting type with 3 pins, simplifying integration into circuits.
The maximum gate-source voltage rating for the SiHA186N60EF-GE3 is ±30 V.
The typical forward voltage drop for this MOSFET is 1.2 V under rated conditions.
Yes, the Vishay SiHA186N60EF-GE3 is RoHS compliant, ensuring it meets environmental safety standards.
This MOSFET is suitable for applications such as high-voltage switch-mode power supplies, industrial motor drives, and renewable energy inverters.
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