Vishay EF Series N-Channel Power MOSFET 600 V 25 A 179 W TO-263 Surface Mount SIHB125N60EF-GE3

Vishay SIHB125N60EF-GE3 is an EF series high-voltage N-channel power MOSFET designed for demanding industrial and commercial electronic applications. It supports a maximum drain-source voltage of 600 V and a continuous drain current of 25 A, making it suitable for heavy load and high-power switching tasks.

The device employs an enhancement channel mode and is housed in a TO-263 surface-mount package, offering mechanical and thermal advantages for printed circuit board assembly. Its maximum power dissipation capacity of 179 W allows sustained operation under high thermal stresses, while the low on-resistance (125 mΩ) reduces conduction losses, enhancing efficiency.

The SIHB125N60EF-GE3 features a typical gate charge of 31 nC, contributing to fast switching capabilities with reduced input power. It withstands operating temperatures ranging from -55°C to 150°C, allowing deployment in harsh and varying thermal environments. The maximum gate-source voltage rating is 30 V, ensuring reliable gate control under diverse conditions.

This power MOSFET is ideal for use in primary-side high-voltage switched-mode power supplies (SMPS), power factor correction stages, motor-drive front-end circuits, industrial inverter-leg switches, and high-voltage LED driver circuits. It is specifically designed to meet robust power conversion and switching requirements in industrial, laboratory, and commercial electronics sectors.

Continuous drain current of 25 A supports demanding load currents. 600 V drain-source voltage rating enables use in high-voltage applications. TO-263 surface mount package for ease of integration and thermal management. Low on-resistance reduces power loss and improves efficiency.

High power dissipation capability of 179 W supports sustained thermal loads. N-channel enhancement mode device optimized for fast switching. Wide operating temperature range of -55°C to 150°C ensures reliability. Gate-source voltage maximum of 30 V enhances control margin.

Typical gate charge of 31 nC allows efficient gate drive timing. Meets RoHS standards ensuring compliance with environmental regulations.

This product is a high-quality power semiconductor component from Vishay, widely used in industrial, commercial, HVAC, and laboratory power management systems. Explore an extensive range of Power MOSFETs and other semiconductor devices for reliable and efficient power solutions on EnvMart.